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MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

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Growth of epitaxial ZnO films on Si(111)

Published online by Cambridge University Press:  01 February 2011

Chunming Jin ,
Ashutosh Tiwari ,
A. Kvit  and
J. Narayan
Chunming Jin
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Ashutosh Tiwari
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
A. Kvit
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
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Abstract

Epitaxial ZnO films have been grown on Si(111) substrates by employing a AlN buffer layer during a pulsed laser-deposition process. The epitaxial structure of AlN on Si(111) substrate provides a template for ZnO growth. The resultant films are evaluated by transmission electron microscopy, x-ray diffraction, and electrical measurements. The results of x-ray diffraction and electron microscopy on these films clearly show the epitaxial growth of ZnO films with an orientational relationship of ZnO[0001]||Aln[0001]||Si[111] along the growth direction and ZnO[2 1 1 0]||AlN[2 1 1 0]||Si[0 1 1] along the in-plane direction. High electrical conductivity (103 S/m at 300 K) and a linear I-V characteristics make these epitaxial films ideal for microelectronic, optoelectronic, and transparent conducting oxide applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K10.7
Copyright
Copyright © Materials Research Society 2002

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References

1. Ohno, H., Science 281, 951 (1998)CrossRefGoogle Scholar
2. Tang, Z. K., Yu, P., Wong, G. K. L., Kawasaki, M., Ohtomo, A., Koinuma, H. and Segawa, Y., Solid State Commun. 103, 459 (1997)CrossRefGoogle Scholar
3. Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., Jin, C., Kvit, A., Kolbas, R. M. and Holland, O. W., Applied Physics Letters 75, 3327 (1999)CrossRefGoogle Scholar
4. Fukumura, T., Zhengwu, Jin, Ohtomo, A., Koinuma, H. and Kawasaki, M., Applied Physics Letters 75, 3366 (199).CrossRefGoogle Scholar
5. Ueda, Kenji, Tabata, Hitoshi and Kawai, Tomoji, Applied Physics Letters 79, 988 (2001)CrossRefGoogle Scholar
6. Furdyna, J. K., J. Appl. Phys. 64, R29 (1988).CrossRefGoogle Scholar
7. Dietl, T., Ohno, H., Matsukura, F., Cibert, J. and Ferrand, D., Science 287, 1019 (2000)CrossRefGoogle Scholar
8. Vispute, R. D., Narayan, J., Wu, Hong and Jagannadham, K., J. Appl. Phys. 77, 4724 (1995) ); J. Narayan, U.S. Patent 5, 406, 123 (April 11, 1995).CrossRefGoogle Scholar

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