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Growth of Diamond on Sapphire by Pulsed Laser Ablation under Oxygen Atmosphere

Published online by Cambridge University Press:  10 February 2011


M. Yoshimoto
Affiliation:
Materials & Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama 226-8503, Japan, ( yoshimo@oxide.rlem.titech.ac.jp )
Y. Hishitani
Affiliation:
Materials & Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama 226-8503, Japan, ( yoshimo@oxide.rlem.titech.ac.jp )
H. Maruta
Affiliation:
Materials & Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama 226-8503, Japan, ( yoshimo@oxide.rlem.titech.ac.jp )
H. Koinuma
Affiliation:
Materials & Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama 226-8503, Japan, ( yoshimo@oxide.rlem.titech.ac.jp )
T. Tachibana
Affiliation:
Electronics & Information Technology Laboratory, Kobe Steel LTD, Takatsukadai, Nishi-ku, Kobe 651- 2271, Japan
S. Nishio
Affiliation:
Materials & Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama 226-8503, Japan, ( yoshimo@oxide.rlem.titech.ac.jp )
M. Kakihana
Affiliation:
Materials & Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama 226-8503, Japan, ( yoshimo@oxide.rlem.titech.ac.jp )
Corresponding

Abstract

We examined the possibility of nucleation and growth of diamond via a hydrogen-free vapor phase route of pulsed laser ablation of a graphite target in a low-pressure pure oxygen atmosphere. The present evidences from microscopic, diffraction and spectroscopic techniques indicate that high-quality (111)-oriented diamond crystals could be nucleated and grown on ultra smooth sapphire (single-crystal α - A12O3)substrates at the temperatures lower than 600°C under the optimized growth conditions of oxygen pressure (around 0.15 Torn) and laser ablation (pulsed laser fluence of 3 x 108 W/cm2 at 5 Hz).


Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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