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Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD
Published online by Cambridge University Press: 01 February 2011
Abstract
AlN self-assembled quantum dots (QDs) with high density of ∼ 4.4 × 1010/cm2 on Si(111) substrates have been grown by low-pressure chemical vapor deposition under a very low V/III ratio of 350. We found that using AlN-QD/AlN buffer two-inch GaN epilayers without cracks were grown, indicating the underlying quantum dots play a crucial role in relaxing the stain of GaN epilayer. The quality and morphology were investigated by atom force microscopy, transmission electron microscopy, X-ray diffraction and optical microscope.
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- Copyright © Materials Research Society 2004