No CrossRef data available.
Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE
Published online by Cambridge University Press: 01 February 2011
During the last ten years, we have developed an efficient growth process of nitrides on silicon substrates by molecular beam epitaxy. In collaboration with partners AlGaN/GaN HEMTs on Si having promising performances have been fabricated. Focusing on the growth aspect and underlying some of the key issues, we present in this paper an overview of our contribution in the field of AlGaN/GaN HEMTs on Si substrates.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C04-04
- Copyright © Materials Research Society 2008