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Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

Published online by Cambridge University Press:  01 February 2011


Fabrice Semond
Affiliation:
Fabrice.Semond@nrc-cnrc.gc.ca, CRHEA, CNRS, rue Bernard Gregory, Valbonne, 06560, France
Yvon Cordier
Affiliation:
yc@crhea.cnrs.fr, CNRS, CRHEA, rue Bernard Gregory, Valbonne, 06560, France
Franck Natali
Affiliation:
fn@crhea.cnrs.fr, CNRS, CRHEA, rue Bernard Gregory, Valbonne, 06560, France
Arnaud Le Louarn
Affiliation:
all@crhea.cnrs.fr, CNRS, CRHEA, rue Bernard Gregory, Valbonne, 06560, France
Stéphane Vézian
Affiliation:
sv@crhea.cnrs.fr, CNRS, CRHEA, rue Bernard Gregory, Valbonne, 06560, France
Sylvain Joblot
Affiliation:
sj@crhea.cnrs.fr, CNRS, CRHEA, rue Bernard Gregory, Valbonne, 06560, France
Sébastien Chenot
Affiliation:
sc@crhea.cnrs.fr, CNRS, CRHEA, rue Bernard Gregory, Valbonne, 06560, France
Nicolas Baron
Affiliation:
nb@crhea.cnrs.fr, CNRS, CRHEA, rue Bernard Gregory, Valbonne, 06560, France
Eric Frayssinet
Affiliation:
ef@crhea.cnrs.fr, CNRS, CRHEA, rue Bernard Gregory, Valbonne, 06560, France
Jean-Christophe Moreno
Affiliation:
jcm@crhea.cnrs.fr, CNRS, CRHEA, rue Bernard Gregory, Valbonne, 06560, France
Jean Massies
Affiliation:
jm@crhea.cnrs.fr, CNRS, CRHEA, rue Bernard Gregory, Valbonne, 06560, France

Abstract

During the last ten years, we have developed an efficient growth process of nitrides on silicon substrates by molecular beam epitaxy. In collaboration with partners AlGaN/GaN HEMTs on Si having promising performances have been fabricated. Focusing on the growth aspect and underlying some of the key issues, we present in this paper an overview of our contribution in the field of AlGaN/GaN HEMTs on Si substrates.


Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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