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Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications

Published online by Cambridge University Press:  01 February 2011

Sudhakar Bharatan
Affiliation:
ksbharat@ncat.edu, North Carolina A&T State University, Electrical and Computer Engineering, 1601 East market st,, Greensboro, NC, 27411, United States
Shanthi Iyer
Affiliation:
iyer@ncat.edu, North Carolina A&T State University, Electrical and Computer Engineering, United States
Kevin Matney
Affiliation:
kevin.matney@BEDE.COM, Bede Scientific Inc., United States
Ward J. Collis
Affiliation:
wjc@ncat.edu, North Carolina A&T State University, Electrical and Computer Engineering, United States
Kalyan Nunna
Affiliation:
kcnunna@ncat.edu, North Carolina A&T State University, Electrical and Computer Engineering, United States
Jia Li
Affiliation:
jiali@ncat.edu, North Carolina A&T State University, Electrical and Computer Engineering, United States
Liangjin Wu
Affiliation:
lw005982@ncat.edu, North Carolina A&T State University, Electrical and Computer Engineering, United States
Kristopher McGuire
Affiliation:
mcguirek@physics.unc.edu, University of North Carolina, Chapel Hill, Department of Physics and Astronomy, United States
Laurie E. McNeil
Affiliation:
mcneil@physics.unc.edu, University of North Carolina, Chapel Hill, Department of Physics and Astronomy
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Abstract

In this work, the growth and characterization of GaAsSbN epilayers nearly lattice matched to GaAs, grown in an elemental solid source molecular beam epitaxy (MBE) system with a RF plasma nitrogen source, are discussed. The Sb and N compositions of the nearly lattice matched layers are 2.6% and 6.8%, respectively, as determined by high resolution x-ray diffraction (HRXRD) and secondary ion mass spectroscopy (SIMS) analysis. The layers are found to be fully strained as evidenced by the presence of Pendellosung fringes on the x-ray diffraction spectra.

Effects of in-situ and ex-situ annealing on the low temperature photoluminescence (PL) characteristics are discussed. The 10 K PL peak energy of 1 eV with a FWHM of 18 meV has been achieved on ex-situ annealed samples in N ambient. The temperature dependence of PL peak energy exhibits “S-shaped” behavior in the low temperature regime, indicative of the presence of localized excitons. Raman spectroscopy analysis has been carried out to determine the local structural changes on annealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications
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