Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-s5ss2 Total loading time: 0.222 Render date: 2021-03-07T19:22:35.449Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs)on Ge/SiGe/Si Substrates

Published online by Cambridge University Press:  01 February 2011

O. Kwon
Affiliation:
The Ohio State University, Department of Electrical Engineering, 2015 Neil Avenue Columbus, OH 43210, U.S.A.
J. Boeckl
Affiliation:
The Ohio State University, Department of Electrical Engineering, 2015 Neil Avenue Columbus, OH 43210, U.S.A.
M. L. Lee
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science and Engineering, 77 Massachusetts Avenue Cambridge, MA 02139, U.S.A.
A. J. Pitera
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science and Engineering, 77 Massachusetts Avenue Cambridge, MA 02139, U.S.A.
E. A. Fitzgerald
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science and Engineering, 77 Massachusetts Avenue Cambridge, MA 02139, U.S.A.
S. A. Ringel
Affiliation:
The Ohio State University, Department of Electrical Engineering, 2015 Neil Avenue Columbus, OH 43210, U.S.A.
Get access

Abstract

AlGaInP visible resonant cavity light emitting diodes (RCLEDs) were grown and fabricated on low-dislocation density, SiGe/Si metamorphic substrates by molecular beam epitaxy. A comparison with devices grown on GaAs and Ge substrates showed that not only did the RCLED device structure successfully transfer to the SiGe substrate, but also a higher optical output power was obtained. This is a result of a high thermal conductivity and an enhanced lateral current spreading. In addition, the growth of an AlGaAs current spreading layer and a modified top metal contact were incorporated to the SiGe RCLED to improve the device performance. With these improvements, a 410μm × 410μm device was fabricated with an optical power of 166μW at 665nm peak wavelength under 500mA current injection and an extremely narrow full width half maximum (FWHM) value of 3.63nm for electroluminescent emission under 50mA injection current.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Fang, F., Adomi, K., Iyer, S., Morkoc, H., Zabel, H., Choi, C., and Otsuka, N., Journal of Applied Physics 68, R31–R58 (1990).CrossRefGoogle Scholar
2. Sieg, R. M., Ringel, S. A., Ting, S. M., Samavedam, S. B., Currie, M., Langdo, T., and Fitzgerald, E. A., Journal of Vacuum Science & Technology B 16, 14711474 (1998).CrossRefGoogle Scholar
3. Carlin, J. A., Ringel, S. A., Fitzgerald, E. A., and Bulsara, M., Progress in Photovoltaics 8, 323332 (2000).3.0.CO;2-U>CrossRefGoogle Scholar
4. Groenert, M. E., Leitz, C. W., Pitera, A. J., Yang, V., Lee, H., Ram, R. J., and Fitzgerald, E. A., Journal of Applied Physics 93, 362367 (2003).CrossRefGoogle Scholar
5. Currie, M. T., Samavedam, S. B., Langdo, T. A., Leitz, C. W., and Fitzgerald, E. A., Applied Physics Letters 72, 17181720 (1998).CrossRefGoogle Scholar
6. Sieg, R. M., Ringel, S. A., Ting, S. M., Fitzgerald, E. A., and Sacks, R. N., Journal of Electronic Materials 27, 900907 (1998).CrossRefGoogle Scholar
7. Orsila, S., Tukiainen, A., Uusimaa, P., Dekker, J., Leinonen, T., and Pessa, M., Journal of Crystal Growth 227, 249254 (2001).CrossRefGoogle Scholar
8. Semiconductor Parameters, edited by Levinshtein, M., Rumyantsev, S., and Shur, M., (World Scientific, Singapore, 1996).Google Scholar
9. Watanabe, K., Nakanishi, H., Yamada, K., and Hoshikawa, K., Applied Physics Letters 45, 643645 (1984).CrossRefGoogle Scholar
10. Lee, C. Y., Wu, M. C., and Lin, W., Journal of Crystal Growth 200, 382390 (1999).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 10 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 7th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs)on Ge/SiGe/Si Substrates
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs)on Ge/SiGe/Si Substrates
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs)on Ge/SiGe/Si Substrates
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *