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Growth and High Resolution Tem Characterization of GexSi1−x/Si Hetero-Structures by Remote Plasma-Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

R. Qian
Affiliation:
Microelectronics Research Center; L. Rabenberg, Center for Materials Science and Engineering, The University of Texas at Austin, Austin, TX 78712; C. Grove, Motorola Inc., Austin, TX 78721; and C. Magee, Evans East, Inc., Plainsboro, NJ 08536
I. Chung
Affiliation:
Microelectronics Research Center; L. Rabenberg, Center for Materials Science and Engineering, The University of Texas at Austin, Austin, TX 78712; C. Grove, Motorola Inc., Austin, TX 78721; and C. Magee, Evans East, Inc., Plainsboro, NJ 08536
D. Kinosky
Affiliation:
Microelectronics Research Center; L. Rabenberg, Center for Materials Science and Engineering, The University of Texas at Austin, Austin, TX 78712; C. Grove, Motorola Inc., Austin, TX 78721; and C. Magee, Evans East, Inc., Plainsboro, NJ 08536
T. Hsu
Affiliation:
Microelectronics Research Center; L. Rabenberg, Center for Materials Science and Engineering, The University of Texas at Austin, Austin, TX 78712; C. Grove, Motorola Inc., Austin, TX 78721; and C. Magee, Evans East, Inc., Plainsboro, NJ 08536
J. Irby
Affiliation:
Microelectronics Research Center; L. Rabenberg, Center for Materials Science and Engineering, The University of Texas at Austin, Austin, TX 78712; C. Grove, Motorola Inc., Austin, TX 78721; and C. Magee, Evans East, Inc., Plainsboro, NJ 08536
A. Mahajan
Affiliation:
Microelectronics Research Center; L. Rabenberg, Center for Materials Science and Engineering, The University of Texas at Austin, Austin, TX 78712; C. Grove, Motorola Inc., Austin, TX 78721; and C. Magee, Evans East, Inc., Plainsboro, NJ 08536
S. Thomas
Affiliation:
Microelectronics Research Center; L. Rabenberg, Center for Materials Science and Engineering, The University of Texas at Austin, Austin, TX 78712; C. Grove, Motorola Inc., Austin, TX 78721; and C. Magee, Evans East, Inc., Plainsboro, NJ 08536
S. Banerjee
Affiliation:
Microelectronics Research Center; L. Rabenberg, Center for Materials Science and Engineering, The University of Texas at Austin, Austin, TX 78712; C. Grove, Motorola Inc., Austin, TX 78721; and C. Magee, Evans East, Inc., Plainsboro, NJ 08536
A. Tasch
Affiliation:
Microelectronics Research Center; L. Rabenberg, Center for Materials Science and Engineering, The University of Texas at Austin, Austin, TX 78712; C. Grove, Motorola Inc., Austin, TX 78721; and C. Magee, Evans East, Inc., Plainsboro, NJ 08536
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Abstract

Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) has been used to grow GexSi1−x/Si heteroepitaxial thin films at low temperatures (∼450°C). In situ RHEED has been used to confirm that smooth, single crystal heteroepitaxial films can be grown by RPCVD. Plan-view and cross-sectional TEM have been employed to study the microstructure of the heteroepitaxial films. Lattice imaging high resolution TEM (HRTEM) has shown perfect epitaxial lattice alignment at the heterojunction interfaces. GexSi1−x/Si films which exceed their CLT's appreciably show dense Moiré fringes under plan-view TEM. The spacings between the fringes have been used to estimate the relaxed lattice constants. In addition to the inhomogeneous strain observed in XTEM, Selected Area electron Diffraction (SAD) analysis of the interfaces displays two split patterns. The spacings between the diffraction spots have been used to calculate the lattice constants in the epitaxial films in different crystal directions, which agree very well with the prediction by Vegard's law as well as the estimate from planview TEM analysis. HRTEM analysis also reveals the crystallographic nature of the interfacial misfit dislocations in the relaxed films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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Growth and High Resolution Tem Characterization of GexSi1−x/Si Hetero-Structures by Remote Plasma-Enhanced Chemical Vapor Deposition
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