Skip to main content Accessibility help
×
Home

Growth and Characterization of non-polar (11–20) GaN and AlGaN/GaN MQWs on R-plane (10–12) sapphire

Published online by Cambridge University Press:  11 February 2011


Sandeep Iyer
Affiliation:
Department of Electrical and Computer Engineering and Center for Photonics Research, Boston University, Boston, MA 02215
David J. Smith
Affiliation:
Center for Solid State Science and Department of Physics and Astronomy, Arizona State University, Tempe, AZ
A. Bhattacharyya
Affiliation:
Department of Electrical and Computer Engineering and Center for Photonics Research, Boston University, Boston, MA 02215
K. Ludwig
Affiliation:
Physics Department, Boston University, Boston, MA 02215
T. D. Moustakas
Affiliation:
Department of Electrical and Computer Engineering and Center for Photonics Research, Boston University, Boston, MA 02215

Abstract

The majority of GaN films and related devices have been grown along the polar [0001] direction, and epitaxial growth along non-polar directions has received much less attention. In this paper we report the study of material properties of GaN and AlGaN/GaN multiple quantum wells (MQWs) deposited on R-plane (10–12) sapphire substrates using RF plasma-assisted molecular beam epitaxy (MBE). In this growth direction, III-Nitrides grow along the non-polar [11–20] direction, with the c-axis in the plane of growth. Various nucleation steps such as surface nitridation, as well as GaN and AlN buffer layers were investigated. Our results indicate that surface nitridation of R-plane sapphire is an undesirable nucleation step, contrary to what has been observed in the case of (0001) sapphire. The AlN buffer layer leads to well-oriented films along the [11–20] direction with many threading defects and faceted surface morphology whereas the GaN buffer leads to the formation of mis-oriented domains close to the buffer region. However, these domains are overgrown and the films have smoother surface morphology with fewer threading defects. These structural findings are supported by photoluminescence and Hall effect measurements done on the same films. Photoluminescence (PL) measurements of (11–20) AlGaN/GaN MQWs show much higher intensity than for similar structures grown on the C-plane sapphire, consistent with the absence of internal fields in the non-polar direction.


Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Doppalapudi, D. and Moustakas, T.D., “Epitaxial Growth of III-Nitrides Thin Films”, “Handbook of Thin Film Materials”, ed. Nalwa, H.S., 4, 57 (2001)Google Scholar
2. Waltereit, P., Brandt, O., Ramsteiner, M., Trampert, A., Grahn, H.T., Menniger, J., Reiche, M. and Ploog, K.H., J. Crystal Growth, 227–228, 437, (2001)CrossRefGoogle Scholar
3. Eddy, C.R. Jr and Moustakas, T.D., J. Appl. Phy. 73, 448 (1993)CrossRefGoogle Scholar
4. Ng, H.M., Appl. Phy. Lett. 80, 4369 (2002)CrossRefGoogle Scholar
5. Sun, C.J., Kung, P., Saxler, A., Haritos, K., and Razeghi, M., J. Appl. Lett. 75, 3964, (1994)Google Scholar
6. Craven, M.D., Lim, S.H., Wu, F., Speck, J.S., Denbaars, S.P., Appl. Phy. Lett. 81, 469 (2002)CrossRefGoogle Scholar
7. Bhattacharyya, A., Friel, I., Iyer, Sandeep, Chen, Tai-Chou, Li, W., Cabalu, J., Fedyunin, Y., Ludwig, K.F. Jr, and Moustakas, T.D. (submitted to Journal of Crystal Growth)Google Scholar
8. Im, J.S., Kollmer, H., Off, J., Sohmer, A., Scholz, F., and Hangleiter, A., Phys. Rev. B 57, R9435 (1998)Google Scholar
9. Deguchi, T., Sekiguchi, K., Nakamura, A., Sota, T., Matsuo, R. and Nakamura, S., Jpn. J. Appl. Phys., Part 2 38, L914 (1999)CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 5 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 5th December 2020. This data will be updated every 24 hours.

Hostname: page-component-b4dcdd7-9fdqb Total loading time: 0.822 Render date: 2020-12-05T02:47:09.305Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags last update: Sat Dec 05 2020 01:59:53 GMT+0000 (Coordinated Universal Time) Feature Flags: { "metrics": true, "metricsAbstractViews": false, "peerReview": true, "crossMark": true, "comments": true, "relatedCommentaries": true, "subject": true, "clr": false, "languageSwitch": true }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Growth and Characterization of non-polar (11–20) GaN and AlGaN/GaN MQWs on R-plane (10–12) sapphire
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Growth and Characterization of non-polar (11–20) GaN and AlGaN/GaN MQWs on R-plane (10–12) sapphire
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Growth and Characterization of non-polar (11–20) GaN and AlGaN/GaN MQWs on R-plane (10–12) sapphire
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *