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Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells

Published online by Cambridge University Press:  10 February 2011

D. K. Sengupta
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. Kim
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
T. Horton
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
H. C. Kuo
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. Thomas
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. L. Jackson
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
A. P. Curtis
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. G. Bishop
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
M. Feng
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
G. E. Stillman
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
Y. C. Chang
Affiliation:
Materials Research Laboratory, Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801
H. C. Liu
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario Kl A0R6, Canada
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Abstract

P-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 Å) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epitaxy in which we optimized the group V source supply sequence so that a 6 K photoluminescence linewidth as narrow as 8.4 meV was observed from a structure with 10 Å wells. Analysis of the PL suggests that interface roughness was minimized. Cross-sectional scanning tunneling microscopy, double crystal x-ray diffraction, and cross-sectional tunneling electron microscopy confirmed that high-quality interfaces and uniform layers were obtained. Using the derived structural parameters, photocurrent spectral response was theoretically predicted for these QWIPs and then experimentally verified.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells
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Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells
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