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Growth and Characterization of InGaN/GaN LEDs on Corrugated Interface Substrate Using MOCVD

Published online by Cambridge University Press:  01 February 2011

Sunwoon Kim
Affiliation:
Photonic Device Laboratory, Samsung Electro-Mechanics Co., Suwon, 442–743, South Korea
Jeong Tak Oh
Affiliation:
Photonic Device Laboratory, Samsung Electro-Mechanics Co., Suwon, 442–743, South Korea
Kyu Han Lee
Affiliation:
Photonic Device Laboratory, Samsung Electro-Mechanics Co., Suwon, 442–743, South Korea
Dong Joon Kim
Affiliation:
Photonic Device Laboratory, Samsung Electro-Mechanics Co., Suwon, 442–743, South Korea
Je Won Kim
Affiliation:
Photonic Device Laboratory, Samsung Electro-Mechanics Co., Suwon, 442–743, South Korea
Yong Chun Kim
Affiliation:
Photonic Device Laboratory, Samsung Electro-Mechanics Co., Suwon, 442–743, South Korea
Jeong Wook Lee
Affiliation:
Photonics Lab, Samsung Advanced Institue of Technology, Yongin-Si, 449–901, South Korea
Hyung-Koun Cho
Affiliation:
Department of Metallurgical Engineering, Dong-A University, Busan, 604–714, South Korea
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Abstract

III-nitride films were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of a substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched one were investigated using an atomic force microscope. The structural and optical properties of GaN on CIS were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, AFM and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The GaN layer didn't grow locally over the surface of the cone shape pattern. The reason is that (0001) c-plane which is favor for GaN growth doesn't exist on the cone shape patterned region. The lateral growth of the GaN layer that was initially grown on the (0001) c-plane among pattern regions, was enhanced by raising the growth temperature and lowering the reactor pressure, resulting in the smooth surface over the pattern region. The (102) FWHM of GaN layer on the patterned substrate was better than that of GaN on the conventional substrate and no defect was detected at the interface of the cone shape pattern. The optical power of the LED on the patterned substrate was 20% higher than that on the conventional substrate due to the increased extraction efficiency.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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Growth and Characterization of InGaN/GaN LEDs on Corrugated Interface Substrate Using MOCVD
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