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Growth and Characterization of Homoepitaxial ZnO Thin Films Grown by CVD

Published online by Cambridge University Press:  01 February 2011

Christian Neumann
Affiliation:
christian.neumann@exp1.physik.uni-giessen.de, Justus-Liebig University Giessen, 1st Physics Institute, Heinrich-Buff-Ring 16, Giessen, 35392, Germany
Joachim Sann
Affiliation:
joachim.sann@exp1.physik.uni-giessen.de, Justus-Liebig University Giessen, 1st Physics Institute, Heinrich-Buff-Ring 16, Giessen, 35392, Germany
Stefan Lautenschläger
Affiliation:
stefan.lautenschlaeger@exp1.physik.uni-giessen.de, Justus-Liebig University Giessen, 1st Physics Institute, Heinrich-Buff-Ring 16, Giessen, 35392, Germany
Frank Bertram
Affiliation:
frank.bertram@physik.uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute for Experimental Physics, Universitätsplatz 2, Magdeburg, 39016, Germany
Jürgen Christen
Affiliation:
juergen.christen@physik.uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute for Experimental Physics, Universitätsplatz 2, Magdeburg, 39016, Germany
Jürgen Bläsing
Affiliation:
juergen.blaesing@physik.uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute for Experimental Physics, Universitätsplatz 2, Magdeburg, 39016, Germany
Alois Krost
Affiliation:
alois.krost@physik.uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute for Experimental Physics, Universitätsplatz 2, Magdeburg, 39016, Germany
Bruno K. Meyer
Affiliation:
Bruno.K.Meyer@exp1.physik.uni-giessen.de, Justus-Liebig University Giessen, 1st Physics Institute, Heinrich-Buff-Ring 16, Giessen, 35392, Germany
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Abstract

ZnO as a direct wide-band-semiconductor with its band gap of 3.3 eV at room temperature is a promising optoelectronic material. The main obstacle in the ZnO system is its lack of achieving reproducible p-type conductivity. The main reasons for this are the high residual intrinsic and extrinsic defect concentrations which are still not completely understood.

Homoepitaxial growth of ZnO and thus minimization of intrinsic defects due to lattice mismatch and incorporation of residual substrate species could be a solution to overcome these problems. Despite the availability of ZnO bulk single crystals reports regarding ZnO homoepitaxy are still quite rare. In this paper we report on a successful homoepitaxial growth of ZnO thin films by chemical vapor deposition (CVD).

Atomic force microscopy shows that two-dimensional epitaxial growth was achieved without any additional buffer layer. With a rocking curve full width at half maximum (FWHM) of 17 arcsec the deposited films show a superior crystalline quality compared to its substrate. The optical quality of the epitaxial films has been characterized laterally by cathodoluminescence and spectrally by photoluminescence. Excitonic emissions at 4K are as narrow as 110 μeV. A dependence of the appearance of excitonic emissions from the growth polarity can be shown which is attributed to different incorporation rates of extrinsic defects.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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