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Growth and Characterization of BRS GaInAsp-GaAs Laser Emitting At 0.8μm by Gas-Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

C. Jelen ,
S. Slivken ,
J. Diaz ,
M. Erdtmann ,
S. Kim ,
D. Wu  and
M. Razeghi
C. Jelen
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
S. Slivken
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
J. Diaz
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
M. Erdtmann
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
S. Kim
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
D. Wu
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
M. Razeghi
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
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Abstract

GaInAsP-GaAs buried ridge structure lasers emitting at 0.8μm have been fabricated on material grown in two steps by low pressure metalorganic chemical vapor deposition and gas-source molecular beam epitaxy. Preliminary laser results are reported, and the feasibility of using gas-source molecular beam epitaxy for the regrowth of sophisticated laser system is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 147
Copyright
Copyright © Materials Research Society 1996

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References

1. Razeghi, M., Diaz, J., Eliashevich, I., Mobarhan, K., He, X., Kolev, E., Wang, L., and Garbuzov, D.Z., presented at the 1993 IEEE/Lasers and Electro-Optics Society Conference, San Jose, CA, 1993 (unpublished).Google Scholar
2. Diaz, J., Eliashevich, I., Mobarhan, K., Kolev, E., Wang, L., Garbuzov, D.Z., and Razghi, M., IEEE Photon. Technol. Lett. PTL–6, 132 (1994).CrossRefGoogle Scholar
3. Mobarhan, K., Razeghi, M., Marquebielle, G., and Vassilaki, E., J. Appl. Phys. 72, 4447 (1992).CrossRefGoogle Scholar
4. Garbuzov, D.Z., Antonishkis, N.Yu., Bondarev, A.D., Gulakov, A.B., Zhigulin, S.N., Katsavets, N.I., Kockergin, A.V., and Rafailov, E.V., IEEE J. Quantum Electron. QE–27, 1531 (1991).CrossRefGoogle Scholar
5. Razeghi, M., Proceedings of Optics, Electro-Optics, & Laser Applications in Science and Engineering Conference, Los Angeles, CA, 1994 (unpublished).Google Scholar
6. He, X. and Razeghi, M., J.Appl.Phys. 62, 618 (1993).Google Scholar

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Growth and Characterization of BRS GaInAsp-GaAs Laser Emitting At 0.8μm by Gas-Source Molecular Beam Epitaxy
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