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Growth and Characterization of 2″ 6H-Silicon Carbide
Published online by Cambridge University Press: 10 February 2011
Abstract
For the growth of 2″ 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavourable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.
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- Copyright © Materials Research Society 1999
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