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Grain Boundary Passivation and Analysis for Solar Cell Applications
Published online by Cambridge University Press: 15 February 2011
Abstract
Grain boundaries in Wacker poly-Si are shown to contribute mid-gap interface states, a greater frequency dependence in a.c. conductance, and lesser frequency dependence in capacitance. H-passivation was shown to be effective in reducing grain boundary effects as evidenced by 4-point probe resistance and IR studies.
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- Copyright © Materials Research Society 1982