Skip to main content Accessibility help
×
Home
Hostname: page-component-78dcdb465f-tqmtl Total loading time: 0.295 Render date: 2021-04-16T03:03:10.672Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Ge/Si(100) Island and Wetting Layer Composition

Published online by Cambridge University Press:  11 February 2011

Yangting Zhang
Affiliation:
Arizona State University, Dept. of Physics and Astronomy, Tempe, AZ 85287–1504, U.S.A.
Jeff Drucker
Affiliation:
Arizona State University, Dept. of Physics and Astronomy, Tempe, AZ 85287–1504, U.S.A.
Get access

Abstratct

Etching water soluble Ge-oxides was used to investigate Si interdiffusion into epitaxial Ge / Si(100) samples. The Ge coverage, θGe, was measured using Rutherford backscattering spectrometry (RBS) before and after water etching of samples grown at substrate temperatures between 400 °C and 650 °C. θGe was correlated with sample morphology determined using atomic force microscopy (AFM). The local Ge concentration was qualitatively assessed using energy dispersive x-ray (EDX) analysis. For samples grown at T=400 °C, water completely dissolves the islands and no Ge is detected by RBS. For samples grown at T=600 and 650 °C, AFM detects no change in the surface morphology and RBS indicates that θGe decreases by about 3 monolayers (ML). These results suggest that for growth at T=400 °C, both the islands and wetting layer are relatively pure Ge while for growth at T≥600 °C, the wetting layer is Ge rich compare to the SiGe alloy islands. EDX confirms this conclusion detecting no Ge signal between islands for etched samples grown at T≥600 °C. Our results suggest that for growth at T≥600 °C, Si interdiffusion into islands is through the region underneath the islands instead of from the wetting layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Chaparro, S., Drucker, J., Yangting, Z., Chandrasekhar, D., McCartney, M. and Smith, D. J., Phys. Rev. Lett. 83, 1199 (1999).CrossRefGoogle Scholar
2. Chaparro, S.A., Zhang, Y., Drucker, J., Chandrasekhar, D., and Smith, D. J., J. Appl. Phys. 87, 2245 (2000).CrossRefGoogle Scholar
3. Liao, X.Z., Zou, J., Cockayne, D.J.H., Jiang, Z.M., Wang, X., Leon, R., Appl. Phys. Lett. 77, 1305 (2000).Google Scholar
4. Magidson, V., Regelman, D.V., Beserman, R., and Dettmer, K., Appl. Phys. Lett. 73, 1044 (1998).CrossRefGoogle Scholar
5. Capellini, G., De Seta, M., and Evangelisti, F., Appl. Phys. Lett., 78, 303 (2001).CrossRefGoogle Scholar
6. Drucker, J., Zhang, Y., Chaparro, S., Chandrasekhar, D., McCartney, M. and Smith, D. J., Surf. Rev. Lett. 7, 527 (2000).CrossRefGoogle Scholar
7. Yangting, Zhang, Margaret, Floyd, Jeff, Drucker, Crozier, P.A., David J., Smith, and Driver, K.P., Mat. Res. Soc. Symp. Proc. Vol. 727 R10.5 (2002).Google Scholar
8. Wan, J., Luo, Y.H., Jiang, Z.M., Jin, G., Liu, J.L., Wang, K.L., Liao, X.Z., and Zou, J., J. Appl. Phys. 90, 4290 (2001).CrossRefGoogle Scholar
9. Chuan-Pu, Liu, Thin Solid Film 415, 296 (2002).Google Scholar
10. Zhang, Y. and Jeff, Drucker, Mater. Res. Soc. Symp. Proc. 618, 123 (2000).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 4 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 16th April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Ge/Si(100) Island and Wetting Layer Composition
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Ge/Si(100) Island and Wetting Layer Composition
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Ge/Si(100) Island and Wetting Layer Composition
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *