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Gaussian distribution of Schottky barrier heights on SnO2 nanowires

Published online by Cambridge University Press:  29 December 2011

Cleber A. Amorim
Affiliation:
Departamento de Física, Universidade Federal de São Carlos, São Carlos, São Paulo – Brazil.
Olivia M. Berengue
Affiliation:
Departamento de Física, Universidade Federal de São Carlos, São Carlos, São Paulo – Brazil.
Luana Araújo
Affiliation:
Departamento de Física, Universidade Federal de São Carlos, São Carlos, São Paulo – Brazil.
Edson R. Leite
Affiliation:
Laboratório Interdisciplinar de Eletroquímica e Cerâmicas, Departamento de Química, Universidade Federal de São Carlos, São Carlos, São Paulo – Brazil.
Adenilson J. Chiquito
Affiliation:
Departamento de Física, Universidade Federal de São Carlos, São Carlos, São Paulo – Brazil.
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Abstract

In this work, we studied metal/SnO2 junctions using transport properties. Parameters such as barrier height, ideality factor and series resistance were estimated at different temperatures. Schottky barrier height showed a small deviation of the theoretical value mainly because the barrier was considered fixed as described by ideal thermionic emission-diffusion model. These deviations have been explained by assuming the presence of barrier height inhomogeneities. Such assumption can also explain the high ideality factor as well as the Schottky barrier height and ideality factor dependence on temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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