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Gas Phase Chemistry Study During Deposition of a-Si:H and μc-Si:H Films by HWCVD using Quadrupole Mass Spectrometry

Published online by Cambridge University Press:  01 February 2011


Samadhan B. Patil
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Bombay, Mumbai-400 076, India.
Alka A. Kumbhar
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Bombay, Mumbai-400 076, India.
R. O. Dusane
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Bombay, Mumbai-400 076, India.

Abstract

Amorphous and microcrystalline silicon films were deposited by HWCVD under different deposition conditions and the gas phase chemistry was studied by in situ Quadrupole Mass Spectrometry. Attempt is made to correlate the properties of the films with the gas phase chemistry during deposition. Interestingly, unlike in PECVD, partial pressure of H2 is higher than any other species during deposition of a-Si:H as well as μc-Si:H. Effect of hydrogen dilution on film properties and on concentration of various chemical species in the gas phase is studied. For low hydrogen dilution [H2]/ [SiH4] from 0 to 1 (where [SiH4] is 10 sccm), all films deposited are amorphous with photoconductivity gain of ∼ 106. During deposition of these amorphous films SiH2 was dominant in gas phase next to [H2]. Interestingly [Si]/[SiH2] ratio increases from 0.4 to 0.5 as dilution increased from 0 to 1, and further to more than 1 for higher hydrogen dilution leading to [Si] dominance. At hydrogen dilution ratio 20, consequently films deposited were microcrystalline.


Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

1. Turban, G., Catherine, Y. and Grolleau, B., Thin Solid Films, 67, 309 (1980)10.1016/0040-6090(80)90464-2CrossRefGoogle Scholar
2. Matsuda, A. and Tanaka, K., Thin Solid Films, 92, 171 (1982)10.1016/0040-6090(82)90200-0CrossRefGoogle Scholar
3. Doyle, J., Robertson, R., Lin, G. H., He, M. Z., and Gallagher, A., J. Appl. Phys, 64, 3215 (1989)10.1063/1.341539CrossRefGoogle Scholar
4. Nozaki, Y., Kongo, K., Miyazaki, T., Kitazoe, M., Horii, K., Umemoto, H., Masuda, A. and Matsumura, H., J. Appl. Phys 88, 5437 (2000)CrossRefGoogle Scholar
5. Duan, H. L., Zaharias, G. A., Bent, S. F., Thin Solid Films, 395, 36 (2001)CrossRefGoogle Scholar
6. Holt, J. K., Swiatek, M., Goodwin, D. G., Mullar, R. P., Goddard, W. A. III, and Atwater, H. A., Thin Solid Films, 395, 29 (2001)10.1016/S0040-6090(01)01202-0CrossRefGoogle Scholar
7. Tange, S., Inoue, K., Tonokura, K., Koshi, M., Thin Solid Films, 395, 42 (2001)10.1016/S0040-6090(01)01204-4CrossRefGoogle Scholar
8. Nozaki, Y., Kitazoe, M., Horii, K., Umemoto, H., Masuda, A. and Matsumura, H., Thin Solid Films, 395, 47 (2001)CrossRefGoogle Scholar
9. Gallagher, A., Thin Solid Films, 395, 25 (2001)CrossRefGoogle Scholar
10. Molenbroek, E. C., Mahan, A. H. and Gallagher, A., J. Appl.Phys., 82, 1909 (1997)10.1063/1.365998CrossRefGoogle Scholar
11. Weber, U. and Schroeder, B., Proceedings, MRS spring meeting, 2001 Google Scholar
12. Mahan, H., Carapella, J., Nelson, B. P., Crandall, R. S. and Balberg, I., J. Appl. Phy, 69, 6728 (1991)10.1063/1.348897CrossRefGoogle Scholar
13. Bauer, S., Schroeder, B. and Oechsner, H., Proceedings of ICAMS 17, Budapest 1997 Google Scholar
14. Scott, B. A. in “Semiconductor and Semimetals” Vol. 21 (A) edited by Willardson, R.K. Beer, A.C. Google Scholar
15. Matsuda, A., J. Non-Cryst. Solids 59-60, 767 (1983).CrossRefGoogle Scholar

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Gas Phase Chemistry Study During Deposition of a-Si:H and μc-Si:H Films by HWCVD using Quadrupole Mass Spectrometry
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Gas Phase Chemistry Study During Deposition of a-Si:H and μc-Si:H Films by HWCVD using Quadrupole Mass Spectrometry
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Gas Phase Chemistry Study During Deposition of a-Si:H and μc-Si:H Films by HWCVD using Quadrupole Mass Spectrometry
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