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GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Kevin Goodman ,
Kejia Wang ,
Xiangning Luo ,
John Simon ,
Tom Kosel  and
Debdeep Jena
Kevin Goodman
Affiliation:
kgoodman@nd.edu, University of Notre Dame, Electrical Engineering, 275 Fitzpatrick Hall, Notre Dame, IN, 46556, United States
Kejia Wang
Affiliation:
kwang@nd.edu, University of Notre Dame, Electrical Engineering, 275 Fitzpatrick Hall, Notre Dame, IN, 46556, United States
Xiangning Luo
Affiliation:
xluo@nd.edu, University of Notre Dame, Electrical Engineering, 275 Fitzpatrick Hall, Notre Dame, IN, 46556, United States
John Simon
Affiliation:
jsimon@nd.edu, University of Notre Dame, Electrical Engineering, 275 Fitzpatrick Hall, Notre Dame, IN, 46556, United States
Tom Kosel
Affiliation:
Thomas.H.Kosel.1@nd.edu, University of Notre Dame, Electrical Engineering, 275 Fitzpatrick Hall, Notre Dame, IN, 46556, United States
Debdeep Jena
Affiliation:
djena@nd.edu, University of Notre Dame, Electrical Engineering, 275 Fitzpatrick Hall, Notre Dame, IN, 46556, United States
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Abstract

Molecular beam epitaxy growth of GaN and InGaN nanowires is accomplished on Si (111) substrates using Ga-droplet nucleation. Typical diameters range from 25-80 nm and lengths can be varied by increasing the growth time; the growth rate is ∼0.25 microns/hour. The nanowires have been characterized structurally and optically. Photoluminescence spectra show band-edge emission of GaN nanowires centered at 362 nm at 290 K. Transmission electron microscopy images unveil that the nanowires are highly crystalline, and grow along the 0001 polar direction. Indium has also been successfully incorporated into GaN nanowires by modifying the growth conditions; the InGaN nanowires emit at ∼520 nm, which provides a possible route to solving strain related problems of high In-composition InGaN based efficient green emitters.

Keywords

nanostructurenitridemolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1080: Symposium O – Semiconductor Nanowires–Growth, Physics, Devices and Applications , 2008 , 1080-O08-04
Copyright
Copyright © Materials Research Society 2008

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References

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