Skip to main content Accessibility help
×
Home

GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Kevin Goodman
Affiliation:
kgoodman@nd.edu, University of Notre Dame, Electrical Engineering, 275 Fitzpatrick Hall, Notre Dame, IN, 46556, United States
Kejia Wang
Affiliation:
kwang@nd.edu, University of Notre Dame, Electrical Engineering, 275 Fitzpatrick Hall, Notre Dame, IN, 46556, United States
Xiangning Luo
Affiliation:
xluo@nd.edu, University of Notre Dame, Electrical Engineering, 275 Fitzpatrick Hall, Notre Dame, IN, 46556, United States
John Simon
Affiliation:
jsimon@nd.edu, University of Notre Dame, Electrical Engineering, 275 Fitzpatrick Hall, Notre Dame, IN, 46556, United States
Tom Kosel
Affiliation:
Thomas.H.Kosel.1@nd.edu, University of Notre Dame, Electrical Engineering, 275 Fitzpatrick Hall, Notre Dame, IN, 46556, United States
Debdeep Jena
Affiliation:
djena@nd.edu, University of Notre Dame, Electrical Engineering, 275 Fitzpatrick Hall, Notre Dame, IN, 46556, United States
Get access

Abstract

Molecular beam epitaxy growth of GaN and InGaN nanowires is accomplished on Si (111) substrates using Ga-droplet nucleation. Typical diameters range from 25-80 nm and lengths can be varied by increasing the growth time; the growth rate is ∼0.25 microns/hour. The nanowires have been characterized structurally and optically. Photoluminescence spectra show band-edge emission of GaN nanowires centered at 362 nm at 290 K. Transmission electron microscopy images unveil that the nanowires are highly crystalline, and grow along the 0001 polar direction. Indium has also been successfully incorporated into GaN nanowires by modifying the growth conditions; the InGaN nanowires emit at ∼520 nm, which provides a possible route to solving strain related problems of high In-composition InGaN based efficient green emitters.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Lave, L., MRS Bulletin. 33, (April 2008).CrossRefGoogle Scholar
2. Muthu, S., Schuurman, F., Pashley, M., IEEE Journal on Selected Topics in Quantum Electronics. 8, No. 2 (2002).CrossRefGoogle Scholar
3. Bertness, K., Sanford, N., Davydov, A., The Journal of Defense Software Engineering. (2006).Google Scholar
4. Qian, F., Li, Y., Gradecak, S., Wang, D., Barrelet, C., Lieber, C.. Nano Letters. 4, No. 10 19751979 (2004).CrossRefGoogle Scholar
5. Bertness, K., Sanford, N., Barker, J., Schlager, J., Roshko, A., Davydov, A., Levin, I.. J. of Electronic Materials. 35, No. 4 576580 (April 2008).CrossRefGoogle Scholar
6. Bertness, K., Roshko, A., Sanford, N., Barker, J., Davydov, A., Journal of Crystal Growth. 287, 522527 (2006).CrossRefGoogle Scholar
7. Kikuchi, A., Kawai, M., Tada, M., Kishino, K., Japanese Journal of Applied Physics. 43, 12A L1524–L1526 (2004).CrossRefGoogle Scholar
8. Zimmler, M. A., Bao, J., Shalish, I., Yi, W., Narayanmurti, V., and Capasso, F., Nanotechnology, 18, 395201 (2007).CrossRefGoogle Scholar
9. Sun, X., Huang, J., Wang, J., Xu, Z.. Nano Letters. 8, No. 4 12191223 (2008).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 9 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 24th January 2021. This data will be updated every 24 hours.

Hostname: page-component-76cb886bbf-7fh6l Total loading time: 0.343 Render date: 2021-01-24T03:12:05.812Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *