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GaAs/GaInP Quantum Well Intersubband Photodetectors for Focal Plane Array Infrared Imaging

Published online by Cambridge University Press:  10 February 2011

C. Jelen ,
S. Slivken ,
G. J. Brown  and
M. Razeghi
C. Jelen
Affiliation:
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208.
S. Slivken
Affiliation:
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208.
G. J. Brown
Affiliation:
Wright Laboratory, Materials Directorate, WL/MLPO, Wright-Patterson AFB, Ohio, 45433
M. Razeghi
Affiliation:
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208.
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Abstract

We demonstrate long wavelength quantum well infrared photodetectors (QWIP) with GaAs quantum wells and GalnP barriers grown using gas-source molecular beam epitaxy. Wafers were grown with varying well widths. The optimum well width was 75 Å, which resulted in a detection peak at 13 μm and a cutoff wavelength of 15 μm Dark current measurements of the samples with 15 μm cutoff wavelength show low dark current densities. Preliminary focal plane array imaging is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 195
Copyright
Copyright © Materials Research Society 1997

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References

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GaAs/GaInP Quantum Well Intersubband Photodetectors for Focal Plane Array Infrared Imaging
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