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GaAs Growth on Micro and Nano Patterned Ge/Si1-XGeX and Si Surfaces

Published online by Cambridge University Press:  01 February 2011

Ganesh Vanamu
Affiliation:
Department of Chemical and Nuclear Engineering & Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, NM-87131
Abhaya K. Datye
Affiliation:
Department of Chemical and Nuclear Engineering & Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, NM-87131
Ralph L. Dawson
Affiliation:
Center for High Technology Materials, 1313 Goddard SE, Albuquerque NM 87106
Saleem H. Zaidi
Affiliation:
Gratings, Inc., 2700 B Broadbent Parkway, N.E, Albuquerque, NM 87107
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Abstract

We show heteroepitaxial growth of GaAs on Ge/SiGe grown on nanometer-scale grating structures. Conventional lithography techniques were combined with reactive ion and wet-chemical etching to fabricate 1-D patterns of silicon posts. The quality of the GaAs layers was investigated using high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), photoluminescence (PL) and etch pit density (EPD) measurements. Our results show significant improvement in the quality of heteroepitaxial layers grown on nano patterned structures compared to those on the unpatterned silicon. The optical quality of the GaAs/Ge/SiGe on nano-scale patterned silicon was comparable to that of single crystal GaAs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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