Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
Hostname: page-component-559fc8cf4f-67gxp Total loading time: 0.264 Render date: 2021-03-05T22:32:21.356Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

GaAs Growth on Micro and Nano Patterned Ge/Si1-XGeX and Si Surfaces

Published online by Cambridge University Press:  01 February 2011

Ganesh Vanamu ,
Abhaya K. Datye ,
Ralph L. Dawson  and
Saleem H. Zaidi
Ganesh Vanamu
Affiliation:
Department of Chemical and Nuclear Engineering & Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, NM-87131
Abhaya K. Datye
Affiliation:
Department of Chemical and Nuclear Engineering & Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, NM-87131
Ralph L. Dawson
Affiliation:
Center for High Technology Materials, 1313 Goddard SE, Albuquerque NM 87106
Saleem H. Zaidi
Affiliation:
Gratings, Inc., 2700 B Broadbent Parkway, N.E, Albuquerque, NM 87107
Get access

Abstract

We show heteroepitaxial growth of GaAs on Ge/SiGe grown on nanometer-scale grating structures. Conventional lithography techniques were combined with reactive ion and wet-chemical etching to fabricate 1-D patterns of silicon posts. The quality of the GaAs layers was investigated using high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), photoluminescence (PL) and etch pit density (EPD) measurements. Our results show significant improvement in the quality of heteroepitaxial layers grown on nano patterned structures compared to those on the unpatterned silicon. The optical quality of the GaAs/Ge/SiGe on nano-scale patterned silicon was comparable to that of single crystal GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A6.9
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

1 Groenert, M. E., Leitz, C. W., Pitera, A. J., Yang, V., Lee, H., Ram, R. J., and Fitzgerald, E. A., J. Appl. Phys. 93, 362 (2003).10.1063/1.1525865CrossRefGoogle Scholar
2 Ringel, S. A., Carlin, J. A., Andre, C. A., Wilt, D. M., Clark, E. B., Jenkins, P., Scheiman, D., Leitz, C. W., Allerman, A. A., and Fitzgerald, E. A., Prog. Photovoltaics 10, 417 (2002).10.1002/pip.448CrossRefGoogle Scholar
3 Masini, G., Colace, L. and Assanto, G., Appl. Phys. Lett. 82, 2524 (2003)10.1063/1.1567046CrossRefGoogle Scholar
4 Oh, J., et al., IEEE Jour. Quan. Elect. 38, 1238 (2002).Google Scholar
5 Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., Gaspare, L. Di, Palange, E., and Evangelisti, F., Appl. Phys. Lett. 72, 3175 (1998).10.1063/1.121584CrossRefGoogle Scholar
6 Calarco, R., et al., Thin Solid Films 391, 138 (2001).10.1016/S0040-6090(01)00971-3CrossRefGoogle Scholar
7 Sieg, R. M., Carlin, J. A., Boeckl, J. J., Ringel, S. A., Currie, M. T., Ting, S. M., Langdo, T. A., Taraschi, G., Fitzgerald, E. A., Keyes, B. M., Appl. Phys. 73, 3111 (1998).Google Scholar
8 Chriquia, Y., Largeaua, L., Patriarchea, G., Saint-Gironsa, G., Bouchoulea, S., Sagnesa, I., Bensahelb, D., Campidellib, Y., Kermarrecb, O., Journal of Crystal Growth 265, 53 (2004).10.1016/j.jcrysgro.2004.01.038CrossRefGoogle Scholar
9 Carlina, J. A.) and Ringel, S. A., Fitzgerald, E. A., Bulsara, M., Keyes, B. M., Appl. Phys. 76, 3111 (2000).Google Scholar
10 Ting, S. M. and Fitzgerald, E. A., J. Appl. Phys. 87, 2618 (2000).10.1063/1.372227CrossRefGoogle Scholar
11 Ismail, K., Meyerson, B. S., and Wang, P. J., Appl. Phys. Lett. 58, 2117 (1991).10.1063/1.104978CrossRefGoogle Scholar
12 Nozawa, K. and Horikoshi, Y., Jpn J. Appl. Phys. 28, L668 (1991).10.1143/JJAP.30.L668CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 5 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 5th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

GaAs Growth on Micro and Nano Patterned Ge/Si1-XGeX and Si Surfaces
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

GaAs Growth on Micro and Nano Patterned Ge/Si1-XGeX and Si Surfaces
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

GaAs Growth on Micro and Nano Patterned Ge/Si1-XGeX and Si Surfaces
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *