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GaAs Epitaxial Growth by ECR-MBE

Published online by Cambridge University Press:  16 February 2011

Naoto Kondo
Affiliation:
NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-Shi, Kanagawa Pref., 243-01 Japan
Yasushi Nanishi
Affiliation:
NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-Shi, Kanagawa Pref., 243-01 Japan
Tomohiro Shibata
Affiliation:
NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-Shi, Kanagawa Pref., 243-01 Japan
Norio Yamamoto
Affiliation:
NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-Shi, Kanagawa Pref., 243-01 Japan
Masatomo Fujimoto
Affiliation:
NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-Shi, Kanagawa Pref., 243-01 Japan
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Abstract

Electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE) is a new technique for GaAs growth. This paper describes surface cleaning of GaAs and Si substrates at fairly low temperatures using hydrogen plasma, low temperature growth of GaAs on both substrates, and selective area growth of GaAs on both substrates partially covered with a silicon nitride (SiN) mask. The ability to clean and grow at low temperatures-assumed to be a benefit of using energetic particles—should permit us to grow layers on processed GaAs and/or Si substrates. The electrical properties of grown layers are also described. Selective area growth has been successfully carried out with no deposit on the mask or irregular growth at the mask edge. The desorption process introduced by impinging ions is found to play an important role in the selective area growth.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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