Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Furnace and Rta Injection of Point Defects into CVD-Grown B Doped Si and SiGe

Published online by Cambridge University Press:  17 March 2011

Janet M. Bonar ,
Barry M. Mcgregor ,
Nick E. B. Cowern ,
Aihua Dan ,
Graham A. Cooke  and
Arthur F. W. Willoughby
Janet M. Bonar
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Southampton, UK
Barry M. Mcgregor
Affiliation:
Department of Engineering, University of Cambridge, Cambridge, UK
Nick E. B. Cowern
Affiliation:
Philips, Eindhoven, The Netherlands
Aihua Dan
Affiliation:
Materials Research Group, School of Engineering, University of Southampton, Southampton, UK
Graham A. Cooke
Affiliation:
ASP Group, University of Warwick, Coventry, UK
Arthur F. W. Willoughby
Affiliation:
Materials Research Group, School of Engineering, University of Southampton, Southampton, UK
Get access

Abstract

The diffusion of B in Si and SiGe under the influence of point defect injection by Rapid Thermal Anneal (RTA) and conventional furnace anneal is studied in this work. B-doped regions in SiGe and Si were grown by LPCVD, and point defects were injected by RTA or furnace annealing bare, Si3N4 or SiO2 + Si3N4 covered samples in an oxygen atmosphere. Self-interstitial defects will be injected into bare Si while vacancy defects will be injected into Si3N4 covered samples, and inert annealing will occur in SiO2 + Si3N4 covered samples. The annealed and asgrown profiles were determined using SIMS analysis, and the diffusivities extracted by direct comparison of the profiles. Both interstitials and vacancies were injected during furnace annealing of SiGe, as demonstrated by the respective enhancement and retardation of the B diffusion. Enhanced B diffusion in SiGe was observed even for 5 s RTA at 1000°C, with an enhancement factor of ∼2.5. The B in Si diffusivity enhancement for interstitial injection by RTA oxidation was found to be a factor of ∼3 compared to inert anneals, close to the factor for SiGe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B4.9
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

1 Fang, T. T., Fang, W. T. C., Griffin, P. B., and Plummer, J. D., Appl. Phys. Lett. 68, 791 (1996).10.1063/1.116534CrossRefGoogle Scholar
2 Kuo, P., Hoyt, J. L., Gibbons, J. F., Turner, J. E., and Lefforge, D., Appl. Phys. Lett. 67, 706 (1995).10.1063/1.115281CrossRefGoogle Scholar
3 Bonar, J. M., McGregor, B. M., Willoughby, A. F. W., and A. Paine, D. N., Mat. Res. Soc. Proc. 568, 103 (1999).10.1557/PROC-568-103CrossRefGoogle Scholar
4 Zaitsu, Y., Shimizu, T., Takeuchi, J., Matsumoto, S., Yoshida, M., Abe, T., and Arai, E., J. Electrochem. Soc. 145, 258 (1998).10.1149/1.1838244CrossRefGoogle Scholar
5 Osada, K., Zaitsu, Y., Matsumoto, S., Yoshida, M., Arai, E., and Abe, T., J. Electrochem. Soc. 142, 202 (1995).10.1149/1.2043867CrossRefGoogle Scholar
6 Lever, R. F., Bonar, J. M., and Willoughby, A. F. W., J. Appl. Phys. 83 1988 (1998).10.1063/1.366927CrossRefGoogle Scholar
7 Tsai, J. C. C., VLSI Technology, ed. Sze, S. M. (McGraw-Hill, 1983) pp. 169–218.Google Scholar
8 Hill, C., Semiconductor Silicon 1981, ed. Huff, H. R., Kriegler, R. J., and Takeishi, Y., (ECS Softbound Series, 1981) 81-5 pp. 988–1006.Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 7 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 22nd January 2021. This data will be updated every 24 hours.

3 Cited by
Hostname: page-component-76cb886bbf-m9qpn Total loading time: 0.307 Render date: 2021-01-22T19:49:19.092Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Furnace and Rta Injection of Point Defects into CVD-Grown B Doped Si and SiGe
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Furnace and Rta Injection of Point Defects into CVD-Grown B Doped Si and SiGe
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Furnace and Rta Injection of Point Defects into CVD-Grown B Doped Si and SiGe
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *