Skip to main content Accessibility help
×
Home
Hostname: page-component-78dcdb465f-vzs5b Total loading time: 0.326 Render date: 2021-04-17T13:20:01.155Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Formation of Silicon Nanocrystallites by Electron Cyclotron Resonance Chemical Vapor Deposition and Ion Beam Assisted Electron Beam Deposition

Published online by Cambridge University Press:  10 February 2011

Eun Kyu Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea, ekkim@kistmail.kist.re.kr
Won Chel Choi
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea, ekkim@kistmail.kist.re.kr Department of Physics, Sung Kyun Kwan University, 300 Chun Chun Dong, Suwon 440-740, Korea
Suk-Ki Min
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea, ekkim@kistmail.kist.re.kr
Chong-Yun Park
Affiliation:
Department of Physics, Sung Kyun Kwan University, 300 Chun Chun Dong, Suwon 440-740, Korea
Corresponding
E-mail address:
Get access

Abstract

Nano-crystalline silicon (nc-Si) thin films were directly deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) and ion beam assisted electron beam deposition (IBAED) method. In the sample deposited by ECR-CVD, the room temperature photoluminescence originated from the nc-Si and the silicon-hydrogen bond were appeared. It was confirmed that the size of the nc-Si could be controlled up to about 3 nm with the low substrate temperature during the deposition process and then the hydrogen atoms play a very important role in the formation of the nc-Si. The IBAED method was also found to an useful technique for nc-Si formation by the control of ion beam power.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Qin, G. G., Li, A. P., and Zhang, Y. X., Phys. Rev. B 54, P. 11122 (1996)CrossRefGoogle Scholar
2. Tsybeskov, L., Moor, K. L., Duttagupta, S. P., Hirschman, K. D., Hall, D. G., and Fauchet, P. M., Appl. Phys. Lett. 69, 3411 (1996)CrossRefGoogle Scholar
3. Hischman, K. D., Tsybeskov, L., Duttagupta, S. P., and Fauchet, P. M., Nature 384, 338 (1996)CrossRefGoogle Scholar
4. Saunders, W. A., Sercel, P. C., Lee, R. B., Atwater, H. A., Vahala, K. J., Flaga, R. C., and Escorcia-Aparcio, E. J., Appl. Phys. Lett. 65, 1814 (1994)Google Scholar
5. Yoshida, T., Takeyama, S., Yamada, Y., and Mutoh, K., Appl. Phys. Lett. 68, 1772 (1996)CrossRefGoogle Scholar
6. Choi, W. C., Lee, M.-S., Kim, E. K., Kim, C. K., Min, S.-K., Park, C.-Y., and Lee, J. Y., Appl. Phys. Lett. 69, 3402 (1996)Google Scholar
7. Tanenbaum, D. M., Laracuente, A. L., and Gallagher, Alan, Appl. Phys. Lett. 68, 1705 (1996)CrossRefGoogle Scholar
8. Choi, W. C., Kim, E. K., Min, S.-K., Park, C.-Y., Kim, J. H., and Seong, T.-Y., Appl. Phys. Lett. 70, 3014 (1997)CrossRefGoogle Scholar
9. Wang, L. W. and Zunger, A., J. Phys. Chem. 98, 2158 (1994)CrossRefGoogle Scholar
10. Delerue, C., Allan, G., and Lannoo, M., Phys. Rev. B 48, 11024 (1993)CrossRefGoogle Scholar
11. Zhao, X., Schoenfeld, O., Komuro, S., Aoyagi, Y., and Sugano, T., Phys. Rev. B 50, 18654 (1994)CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 1 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 17th April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Formation of Silicon Nanocrystallites by Electron Cyclotron Resonance Chemical Vapor Deposition and Ion Beam Assisted Electron Beam Deposition
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Formation of Silicon Nanocrystallites by Electron Cyclotron Resonance Chemical Vapor Deposition and Ion Beam Assisted Electron Beam Deposition
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Formation of Silicon Nanocrystallites by Electron Cyclotron Resonance Chemical Vapor Deposition and Ion Beam Assisted Electron Beam Deposition
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *