Skip to main content Accessibility help
×
Home

Formation of Ni/Pt/Au Ohmic Contacts to p-GaN

Published online by Cambridge University Press:  10 February 2011


Ja-Soon Jang
Affiliation:
Deptartment of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea
Hyo-Gun Kim
Affiliation:
Deptartment of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea
Kyung-Hyun Park
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O. Box 130, Cheongyang, Seoul, Korea
Chang-Sub Um
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O. Box 130, Cheongyang, Seoul, Korea
Il-Ki Han
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O. Box 130, Cheongyang, Seoul, Korea
Sun-Ho Kim
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O. Box 130, Cheongyang, Seoul, Korea
Heong-Kyu Jang
Affiliation:
Kumho Information and Telecommunication Laboratory, Kwangju 506-712, Korea
Seong-Ju Park
Affiliation:
Deptartment of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea

Abstract

We report a new Ni/Pt/Au (20/30/80 nm) metallization scheme to achieve a low ohmic contacts to p-type GaN with a carrier concentration of 9.4 × 1016 cm-3. A Mg-doped GaN layer (0.5 μm) was grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). All metal thin films were deposited on the p-GaN layer in an electron-beam evaporation system. Samples were annealed by a rapid thermal annealing (RTA) process at a range of temperatures from 300 °C to 850 °C under a flowing Ar atmosphere. A circulartransmission line model (c-TLM) was employed to calculate the specific contact resistance, and current-voltage (I-V) data were measured with HP4155A. The Ni/Pt/Au contacts without the annealing process showed nearly rectifying characteristics. The ohmic contacts were formed on the samples annealed at 500 °C for 30 sec and the I-V data showed a linear behavior. The specific contact resistance was 2.1 × 10-2 Ωcm2. However with increasing the annealing temperature above 600 °C, ohmic contacts were again degraded. Auger electron spectroscopy (AES) depth profiles were used to investigate the interfacial reactions between the trilayer and GaN. AES results suggested that Pt plays a significant role in forming ohmic contact as an acceptor at the interface. Atomic force microscope (AFM) also showed that the samples with good ohmic contact have very smooth surface.


Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Nakamura, S., Senoh, M., Iwasa, N., and Nagahama, S., Jpn. J. Appl. Phys. 34, L797 (1995)CrossRefGoogle Scholar
2. Nakamura, S., Senoh, M., Iwasa, N., Yamda, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys. 35 L217 (1996)10.1143/JJAP.35.L217CrossRefGoogle Scholar
3. Khan, M. A., Bhattarai, A. R., Kuznia, J. N., and Oslon, D. T., Appl. Phys. Lett. 62, 1786 (1993)CrossRefGoogle Scholar
4. Khan, M. Asif, Kuznia, J. N., Olson, D. T., Van Hove, J. M., Blasingame, M., and Reitz, L.F., Appl. Phys. Lett. 60, 2917 (1993)10.1063/1.106819CrossRefGoogle Scholar
5. Foresi, J. S. and Moustakas, T.D., Appl. Phys Lett. 62, 2859 (1993)CrossRefGoogle Scholar
6. Lin, M. E., Ma, Z., Huang, F. Y., Fan, Z. F., Allen, L. H., and Morkoc, H., Appl. Phys. Lett. 64, 1003 (1994)CrossRefGoogle Scholar
7. Fan, Z., Mohammadm, S., Kim, W., Appl. Phys. Lett. 68, 1672 (1996)CrossRefGoogle Scholar
8. Ruvimov, S., Liliental-Weber, Z., and Washbum, J., Appl. Phys. Lett. 69, 1556 (1996)CrossRefGoogle Scholar
9. Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett. 64, 28 (1994)Google Scholar
10. Kim, T., Yoo, M. C., and Kim, T., Mat. Res. Sco. Symp. Proc. 449, 1061 (1997)CrossRefGoogle Scholar
11. Smith, L. L., Davis, R. F., Kim, M. J., Carpenter, R. W., and Huang, Y., J. Mater. Res. 12, 2249 (1997)CrossRefGoogle Scholar
12. Trexler, J. T., Pearton, S. J., Holloway, P. H., Miler, M. G., Evans, K. R., and Karlicek, R. F., Mat. Res. Soc. Symp. Proc. 449, 1091 (1997)CrossRefGoogle Scholar
13. Marlow, G. S. and Das, M. B., Solid State Electronics 25, 91 (1982)CrossRefGoogle Scholar
14. Duxstud, K. J., Haller, E. E., Yu, K. M., Hisch, M. T., Imler, W. R., Steigerwald, D. A., Phnce, F. A., and Romano, L. T., Mat. Res. Soc. Symp. Proc. 449, 1049 (1997)CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 4 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 3rd December 2020. This data will be updated every 24 hours.

Hostname: page-component-6c64649b67-zfcxw Total loading time: 0.361 Render date: 2020-12-03T12:10:00.680Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags last update: Thu Dec 03 2020 11:15:45 GMT+0000 (Coordinated Universal Time) Feature Flags: { "metrics": true, "metricsAbstractViews": false, "peerReview": true, "crossMark": true, "comments": true, "relatedCommentaries": true, "subject": true, "clr": false, "languageSwitch": true }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Formation of Ni/Pt/Au Ohmic Contacts to p-GaN
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Formation of Ni/Pt/Au Ohmic Contacts to p-GaN
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Formation of Ni/Pt/Au Ohmic Contacts to p-GaN
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *