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Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

Published online by Cambridge University Press:  10 February 2011

Suk-Ho Choi
Affiliation:
College of Electronics and Information and Institute of Natural Sciences, Kyung Hee University, Suwon 449-701, Korea
Jun Sung Bae
Affiliation:
College of Electronics and Information and Institute of Natural Sciences, Kyung Hee University, Suwon 449-701, Korea
Kyung Jung Kim
Affiliation:
Nano Surface Group, Korea Research Institute of Standards and Science, P.O.Box 102, Yusong, Taejon 305-600, Korea
Dae Won Moon
Affiliation:
Nano Surface Group, Korea Research Institute of Standards and Science, P.O.Box 102, Yusong, Taejon 305-600, Korea
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Abstract

Si/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers
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