Skip to main content Accessibility help
×
Home
Hostname: page-component-5bf98f6d76-r9mtw Total loading time: 0.27 Render date: 2021-04-21T21:43:38.048Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Formation of a-Si:H Film by p-CVD Method with SiH4-He Mixture and its Opto-Electronic Properties

Published online by Cambridge University Press:  15 February 2011

Youichi Nakamura
Affiliation:
Nippon Institute of Technology, Department of Systems Engineering, Miyashiro, Minami-saitama, Saitama, 345, JAPAN
Tsuyoshi Yamaguchi
Affiliation:
Nippon Institute of Technology, Department of Systems Engineering, Miyashiro, Minami-saitama, Saitama, 345, JAPAN
Atsushi Okagawa
Affiliation:
Nippon Institute of Technology, Department of Systems Engineering, Miyashiro, Minami-saitama, Saitama, 345, JAPAN
Get access

Abstract

Formation of hydrogenated amorphous silicon (a-Si:H) was carried out by rf glow discharge method in the reactive gas systems of silane. By preliminary experiments on a-Si:H for helium dilution, a relatively high deposition rate up to 2–3 μm/hr was obtained. In order to investigate the opto-electronic properties on a-Si:H films due to different dilution of helium or hydrogen, measurements on optical band gap Eop, electric conductivity and FT-IR were done. Optical emission spectra were also observed. Optical band gap value Eop on a-Si:H film for SiH4 (10%) -He (90%) was nearly constant about 1.73 eV, while that for SiH4 (10%) -H2 (90%) was increased from 1.75 eV to 1.78 eV with increase of residence time of silane molecule and it was relatively high. From the experimental results of FT-IR, ratio of bonding mode of SiH to (SiH+SiH2) for hydrogen dilution was about 90% and higher than that for helium dilution, while hydrogen concentration in the film for SiH4 (10%) -H2 (90%) was less than 10% and that for SiH4 (10%) -He (90%) was 20–30%.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Knights, J.C., Lujan, R.A., Rosenblum, M.P., Street, R.A., Dieglesem, D.K. and Reiner, J.A., Appl. Phys. Lett. 38 (1983) 331.CrossRefGoogle Scholar
2. Nakamura, Y. and Kutsuwada, N., IS&T Proceedings of 8th Int'l Congress on Advances in Non-impact Printing Technologies, Oct. 25–30,1992. Williamsburg VA p.250.Google Scholar
3. Ikeda, A., Kawakami, T., Ejima, K., Itoh, B., Sasaki, T., Shimono, Y. and Wakita, K., IS&T Proceedings of 8th Int'l Congress on Advances in Non-impact Printing Technologies, Oct. 25–30, 1992. Williamsburg VA p. 257.Google Scholar
4. Kampas, F.J., J. Appl. Phys. 53 (1982) 6408.CrossRefGoogle Scholar
5. Tanaka, K. and Matsuda, A., Mater. Sci. Rep. 2 (1987) 139.CrossRefGoogle Scholar
6. Lin, G.H., Doyle, J.R., He, M. and Gallagher, A., J. Appl. Phys. 64 (1988) 188.CrossRefGoogle Scholar
7. Perrin, J., Solomon, I., Bourdon, B., Fontenille, J. and Ligeon, E., Thin Solid Films 62 (1979) 327.CrossRefGoogle Scholar
8. Shirai, H., Das, D., Hanna, J. and Shimizu, I., Technical Digest of the Int'l PVSEC-5, Kyoto, Japan (1990) p. 59.Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 7 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 21st April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Formation of a-Si:H Film by p-CVD Method with SiH4-He Mixture and its Opto-Electronic Properties
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Formation of a-Si:H Film by p-CVD Method with SiH4-He Mixture and its Opto-Electronic Properties
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Formation of a-Si:H Film by p-CVD Method with SiH4-He Mixture and its Opto-Electronic Properties
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *