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Formation and Properties of Silicon/Silicide/Oxide Nanochains

Published online by Cambridge University Press:  01 February 2011

Hideo Kohno
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–16 Machikaneyama, Toyonaka, Osaka 560–0043, JAPAN
Yutaka Ohno
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–16 Machikaneyama, Toyonaka, Osaka 560–0043, JAPAN
Satoshi Ichikawa
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST Kansai), 1–8–31 Midorigaoka, Ikeda, Osaka 563–8577, JAPAN
Tomoki Akita
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST Kansai), 1–8–31 Midorigaoka, Ikeda, Osaka 563–8577, JAPAN
Koji Tanaka
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST Kansai), 1–8–31 Midorigaoka, Ikeda, Osaka 563–8577, JAPAN
Seiji Takeda
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–16 Machikaneyama, Toyonaka, Osaka 560–0043, JAPAN
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Abstract

Silicon/silicide/oxide nanochains, which have an alternate arrangement of silicon/copper silicide composite nanoparticles and oxide nanowires, were fabricated using silicon/oxide nanochains as templates. Photoluminescence was observed at room temperature and considered to be due to recombination of excitons in oxide. Electrostatic potential in the material was also investigated by electron holography. No visible potential bending at the silicon/silicide interface was detected.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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