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Formation and Characterization of Striped Nano-Channel Structure on the Functional Oxide Thin Film

Published online by Cambridge University Press:  01 February 2011

Masayasu Kasahara
Affiliation:
m.kasahara@iem.titech.ac.jp, Tokyo Institute of Technology, Innovative & Engineered Materials, 4259-R3-6,Nagatsuta,Midori, Yokohama, 226-8503, Japan, +81-45-924-5331, 81-45-924-5365
Akifumi Matsuda
Affiliation:
m.kasahara@iem.titech.ac.jp, Tokyo Institute of Technology, Innovative & Engineered Materials, 4259-R3-6,Nagatsuta,Midori, Yokohama, 226-8503, Japan, +81-45-924-5331, 81-45-924-5365
Yasuyuki Akita
Affiliation:
a.matsuda@iem.titech.ac.jp, Tokyo Institute of Technology, Innovative & Engineered Materials, 4259-R3-6, Nagatsuta, Midori, Yokohama, 226-8503, Japan
Wakana Hara
Affiliation:
y.akita@iem.titech.ac.jp, Tokyo Institute of Technology, Innovative & Engineered Materials, 4259-R3-6, Nagatsuta, Midori, Yokohama, 226-8503, Japan
Keisuke Kobayashi
Affiliation:
w.hara@iem.titech.ac.jp, Tokyo Institute of Technology, Innovative & Engineered Materials, 4259-R3-6, Nagatsuta, Midori, Yokohama, 226-8503, Japan
Kazuyoshi Kobayashi
Affiliation:
kei-koba@jty.yuden.co.jp, Taiyo Yuden Co.Ltd., 5607-2, Nakamurota, Takasaki, 370-3347, Japan
Toshimasa Suzuki
Affiliation:
kazkoba@jty.yuden.co.jp, Taiyo Yuden Co.Ltd., 5607-2, Nakamurota, Takasaki, 370-3347, Japan
Mamoru Yoshimoto
Affiliation:
suzuki-t@jty.yuden.co.jp, Taiyo Yuden Co.Ltd., 5607-2, Nakamurota, Takasaki, 370-3347, Japan
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Abstract

The striped nano-channel structure (about 10nm in depth) was formed on the NiO film surface by thermal annealing of the film deposited on the sapphire(0001) substrate with periodic straight atomic steps. The interval of each nano-channel was about 100nm in average and well corresponding to the separation of atomic steps on the used sapphire(0001) substrate. Effects of annealing temperature and impurity doping into NiO upon the nanochannel formation were examined in order to control the depth. The depth of nano-channels formed on the alkali-metal(Li or Na) doped NiO films were found to be larger than that of nano-channels on the non-doped NiO films and enlarged with increasing annealing temperature in the range of 500∼900°C. Atomic-scale cross sectional structure of the nano-channel was characterized by transmission electron microscopy with focused on the film/substrate interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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