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Field Emission of Zinc Oxide Nanostructure

Published online by Cambridge University Press:  15 February 2011

Sang Hyun Lee
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
SeGi Yu
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
Taewon Jeong
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
Jungna Heo
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
Wonseok Kim
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
Chang Soo Lee
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
Jeonghee Lee
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
J. M. Kim
Affiliation:
The National Creative Research Initiatives Center for Electron Emission Source, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
Tae Yun Kim
Affiliation:
School of Chemical Engineering and Technology, Chonbuk National University, Chonju 561-756, Korea
Kee Suk Nahm
Affiliation:
School of Chemical Engineering and Technology, Chonbuk National University, Chonju 561-756, Korea
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Abstract

Field emission characteristics were investigated for zinc oxide nanostructures which were grown on NiO catalyzed silicon (100) substrate by chemical vapor deposition method. The asgrown zinc oxide showed needle-shaped nanostructures with tip diameters of 20∼40 nm and length of 3∼5 νm. The turn-on field was found to be about 6 V/νm at a current density of 1 νA/cm2. After several field emission measurements, the turn-on field was increased up to 8.5 V/νm and the magnitude of field enhancement factor was decreased from 1190 to 940. According to SEM, the tip diameter increase of the zinc oxide to 60 nm was observed after several emission measurements. Therefore, degradation of the field emission characteristic after measurements is attributed to this deformation of the tip shape.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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