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Ferromagnetic Ge1-xMx (M = Mn, Co, and Fe) Nanowires

Published online by Cambridge University Press:  26 February 2011

Yong Jae Cho
Affiliation:
valunus@nate.com, Korea University, Department of Material Chemistry, In the building of school of life science and biotechnilogy Rm #235, 5-ka,Anam-dong Sungbuk-ku Seou, Seoul, 136-701, Korea, Republic of, 02-3290-3973, 02-3290-3992
chang hyun Kim
Affiliation:
worth24@naver.com, Korea University, Department of Material Chemistry, in the building of school of life science and biotechnology Rm#235 5-ka, Anam-dong Sungbuk-ku, Seoul, 136-701, Korea, Republic of
jeunghee Park
Affiliation:
nanolab@empal.com, Korea University, Department of Material Chemistry, in the building of school of life science and biotechnology Rm#235 5-ka, Anam-dong Sungbuk-ku, Seoul, 136-701, Korea, Republic of
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Abstract

We synthesized Ge and Ge1-xMx (M = Mn, Co, and Fe, x ≤ 0.2) nanowires using thermal vapour transport method. All nanowires consisted of single-crystalline Ge nanocrystals grown uniformly with the [111] direction. High-resolution X-ray diffraction pattern shows no cluster formation for all Ge1-xMx nanowires. The Mn and Fe doping decreases the lattice constant, but not Co doping. X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurement revealed that the Mn2+ and Fe2+ ions preferentially occupy the tetrahedral sites, substituting for Ge. We suggest that the Mn or Fe ions produce dopant-acceptor hybridization with host defects in p-type Ge, but not Co ions. The magnetic moment of Mn2+ ions reaches a maximum for x = ∼ 0.1, which is much larger than that of the Fe2+ ions. The magnetization measurement also confirms the room-temperature ferromagnetism of Mn-doped Ge nanowires, which is maximized at x = ∼ 0.1. We conclude that the Mn ions are most efficiently doped into the Ge nanowires to form a ferromagnetic semiconductor.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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