Published online by Cambridge University Press: 21 March 2011
High doses (1015 – 5×x1016 cm−2) of Mn+ ions were implanted into p-GaN at ∼350oC and annealed at 700-1000°C. At the high end of this dose range, platelet structures of GaxMn1−xN were formed. The presence of these regions correlated with ferromagnetic behavior in the samples up to ∼250K. At low doses, the implantation led to a buried band of defects at the end of the ion range.
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