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Ferromagnetic and Structural Properties of Mn-Implanted p-GaN

Published online by Cambridge University Press:  21 March 2011

N. Theodoropoulou
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611
A.F. Hebard
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611
M.E. Overberg
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
S.N.G. Chu
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
R.G. Wilson
Affiliation:
Consultant, Stevenson Ranch, CA 95131
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Abstract

High doses (1015 – 5×x1016 cm−2) of Mn+ ions were implanted into p-GaN at ∼350oC and annealed at 700-1000°C. At the high end of this dose range, platelet structures of GaxMn1−xN were formed. The presence of these regions correlated with ferromagnetic behavior in the samples up to ∼250K. At low doses, the implantation led to a buried band of defects at the end of the ion range.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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