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Fabrication of Electrically Active Si-based Thin Films by Pulsed Laser Deposition of SiO/C Dual Targets

Published online by Cambridge University Press:  01 February 2011

Yusaburo Ono
Affiliation:
ono.y.ad@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative & Engineered Materials, Yokohama, Japan
Yushi Kato
Affiliation:
kato.y.am@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative & Engineered Materials, Yokohama, Japan
Yasuyuki Akita
Affiliation:
akita.y.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative & Engineered Materials, Yokohama, Japan
Makoto Hosaka
Affiliation:
hosaka.m.ab@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative & Engineered Materials, Yokohama, Japan
Naoki Shiraishi
Affiliation:
shiraishi.n.ab@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative & Engineered Materials, Yokohama, Japan
Makoto Yamaguchi
Affiliation:
myamaguchi@osaka-ti.co.jp, OSAKA Titanium technologies Co., Ltd., Amagasaki, Japan
Osami Sakata
Affiliation:
o-sakata@spring8.or.jp, Japan Synchrotron Radiation Research Institute/ SPring-8, Sayo-gun, Japan
Mamoru Yoshimoto
Affiliation:
yoshimoto.m.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative & Engineered Materials, Yokohama, Japan
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Abstract

We investigated the fabrication of Si nanocrystals, including thin films, by annealing the SiO/C/SiO thin films in an Ar atmosphere. The SiO/C/SiO trilayered thin films were deposited on α-Al2O3 (0001), Si (111), or ITO-coated borosilicate glass substrates at room temperature by pulsed laser deposition using dual sintered SiO and graphite targets. The SiO/C/SiO thin films subjected to heat treatment at 500°C included nanocrystalline Si. Measurements by synchrotron radiation X-ray diffraction indicated the formation of Si nanocrystals having a size of 5–10 nm. Fourier transform infrared spectra showed that Si–O stretching and vibrational peak intensities of the as-deposited thin film decreased remarkably after annealing. The C layer in the SiO/C/SiO trilayered thin films is considered to play a role in enhancing the chemical reaction that produces Si nanocrystals through reduction of SiO during heat treatment. The annealed SiO/C-based thin films, including Si nanocrystals, exhibited photosensitive conduction behavior in current–voltage measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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