Hostname: page-component-77c89778f8-gq7q9 Total loading time: 0 Render date: 2024-07-21T11:59:34.158Z Has data issue: false hasContentIssue false

Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE

Published online by Cambridge University Press:  01 February 2011

Yuki Niiyama
Affiliation:
niyama.yuki@furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan, +81-45-311-1218, +81-45-316-6374
Sadahiro Kato
Affiliation:
sadakato@yokoken.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Yoshihiro Sato
Affiliation:
ysatoh@yokoken.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Masayuki Iwami
Affiliation:
iwami@yokoken.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Jiang Li
Affiliation:
ljiang@yokoken.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Hironari Takehara
Affiliation:
mrf02008@mr.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Hiroshi Kambayashi
Affiliation:
kambayashi.hiroshi@furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Nariaki Ikeda
Affiliation:
nariaki@yokoken.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Seikoh Yoshida
Affiliation:
seikoh@yokoken.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Get access

Abstract

We investigated an AlGaN/GaN heterostructure field effect transistor (HFET) on Si substrates using a multi-wafer metalorganic vapor phase epitaxy (MOVPE) system. It was confirmed that a GaN film with smooth surface and without any crack was obtained. To increase a resistance of a GaN buffer layer, the carbon (C) -doping was carried out by controlling the V/III ratio and the growth pressure. The breakdown voltage of the buffer layer was dramatically improved by introducing the C. As a result, the breakdown voltage was about 900 V when the C concentration was about ∼8×1018 cm−3. After while, an AlGaN/GaN heterojunction FET (HFET) on a C-doped GaN buffer layer was fabricated. We achieved the breakdown voltage of over 1000 V and the maximum drain current of over 150 mA/mm, respectively. It was found that the C doped buffer layer is very effective for improving the breakdown voltage of AlGaN/GaN HFETs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Baliga, B. J., “Semiconductors for high-voltage, vertical channel field effect transistors,” J. Appl. Phys. Vol.53, pp. 17591764, 1982.Google Scholar
2. Baliga, B. J., “Power Semiconductor Device Figure of Merit for High-Frequency Applications,” IEEE Electron Device Lett. Vol.10, pp. 455457, 1989.Google Scholar
3. Guha, S., Bojarczuk, N. A.: Appl. Phys. Lett. 72, 415 (1998).Google Scholar
4. Yang, J. W., Lunev, A., Simin, G., Chitnis, A., Shatalov, M., Khan, M. A., van Nostrand, J. E. and Gaska, R.: Appl. Phys. Lett. 76, 273 (2000).Google Scholar
5. Dadgar, A., Christen, J., Riemann, T., Richter, S., Blaesing, J., Diez, A., Krost, A., Alam, A., and Heuken, M.: Appl. Phys. Lett. 78, 2211 (2001).Google Scholar
6. Wang, D., Hiroyama, Y., Tamura, M., Ichikawa, M. and Yoshida, S.: Appl. Phys. Lett. 77, 1846 (2000).Google Scholar
7. Simin, G., Hu, X., Tarakji, A., Zhang, J., Koudymv, A., Saygi, S., Yang, J., Khan, A., Shur, M. S., and Gaska, R., Jpn. J. Appl. Phys. 40, L1142 (2001).Google Scholar
8. Vellas, N., Gaquiere, C., Guhel, Y., Werquin, M., Bue, F., Auby, R., Delage, S., Semond, F., and Jaeger, J. C. Dc IEEE Electron Device Lett. 23, 46 (2002).Google Scholar
9. Yoshida, S., Katoh, S., Takehara, H., Satoh, Y., Li, J. Ikeda, N., Hataya, K., and Sasaki, H.: Phys. Stat. Sol. (a) 203, 1739 (2006).Google Scholar
10. Xing, H., Green, D. S., Yu, H., Mates, T., Kozodoy, P., Keller, S., Denbaars, S. P., and Mishra, U. K.: Jpn. J. Appl. Phys. 42, 50 (2003).Google Scholar