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Fabrication and Optical Properties of Green emission semipolar {101̅1} InGaN/GaN MQWs Selective Grown on GaN Nanopyramid Arrays

Published online by Cambridge University Press:  01 July 2011


Shih-Pang Chang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan R&D Division, Epistar Co. Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan
Jet-Rung Chang
Affiliation:
Department of Electronic Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Ji-Kai Huang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Jinchai Li
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan Department of Physics, Xiamen University, Xiamen 361005, China
Yi-Chen Chen
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Kuok-Pan Sou
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Yun-Jing Li
Affiliation:
Institute of Lighting and Energy Photonics, National Chiao Tung University at Tainan, Taiwan
Hung-Chih Yang
Affiliation:
R&D Division, Epistar Co. Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan
Ta-Cheng Hsu
Affiliation:
R&D Division, Epistar Co. Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan
Tien-Chang Lu
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Hao-Chung Kuo
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Chun-Yen Chang
Affiliation:
Department of Electronic Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

Abstract

We report that the high crystalline and high efficiency green emission semipolar {101̅1} InGaN/GaN multiple quantum wells (MQWs) grown on the {101̅1} facets of GaN nanopyramid arrays by selective area epitaxy. Clear and sharp interfaces of the semipolar {101̅1} InGaN/GaN MQWs was observed by transmission electron microscopy images. As comparing with (0001) MQWs, the internal electric field of {101̅1} MQWs was remarkably reduced from 1.7 MV/cm to 0.5 MV/cm, and the room temperature (RT) internal quantum efficiency (IQE) at green emission was enhanced by about 80%. This greatly enhancement of IQE is due to suppress the polarization effect in the {101̅1} MQWs which shorten the radiative recombination to compete with nonradiative recombination at RT. These results evince that the {101̅1} planes are promising for solving the efficiency green gap of III-nitride light emitters.


Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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Fabrication and Optical Properties of Green emission semipolar {101̅1} InGaN/GaN MQWs Selective Grown on GaN Nanopyramid Arrays
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Fabrication and Optical Properties of Green emission semipolar {101̅1} InGaN/GaN MQWs Selective Grown on GaN Nanopyramid Arrays
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Fabrication and Optical Properties of Green emission semipolar {101̅1} InGaN/GaN MQWs Selective Grown on GaN Nanopyramid Arrays
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