Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-s65px Total loading time: 0.355 Render date: 2021-03-05T21:30:58.890Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Fabrication and Electrical Characterization of Metal-Silicide Nanocrystals for Nano Floating Gate Nonvolatile Memory

Published online by Cambridge University Press:  31 January 2011

Seung Jong Han
Affiliation:
halbe82@hanmail.net, Hanyang University, Physics, Seoul, Korea, Republic of
Ki Bong Seo
Affiliation:
tjrlqhd@naver.com, Hanyang University, Physics, Seoul, Korea, Republic of
Dong Uk Lee
Affiliation:
kom7807@gmail.com, Hanyang University, Physics, Seoul, Korea, Republic of
Eun Kyu Kim
Affiliation:
ek-kim@hanyang.ac.kr, Hanynag University, Physics, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Se-Mam Oh
Affiliation:
ohminy@nate.com, Kwangwoon University, Electronic Materials Engineering, Seoul, Korea, Republic of
Won-Ju Cho
Affiliation:
chowj@kw.ac.kr, Kwangwoon University, Electronic Materials Engineering, Seoul, Korea, Republic of
Get access

Abstract

We have fabricated the nano-floating gate memory with the TiSi2 and WSi2 nanocrystals embedded in the dielectrics. The TiSi2 and WSi2 nanocrystals were created by using sputtering and rapidly thermal annealing system, and then their morphologies were investigated by transmission electron microscopy. These nanocrystals have a spherical shape with an average diameter of 2-5 nm. The electrical properties of the nano-floating gate memory with TiSi2 and WSi2 nanocrystals were characterized by capacitance-voltage (C-V) hysteresis curve, memory speed and retention. The flat-band voltage shifts of the TiSi2 and WSi2 nanocrystals capacitors obtained appeared up to 4.23 V and 4.37 V, respectively. Their flat-band voltage shifts were maintained up to 1.6 V and 1 V after 1 hr.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below.

References

1 Bez, R., and Pirovano, A., Mater. Sci. Semicond. Process 7 349 (2004).CrossRefGoogle Scholar
2 Shin, Y., Yang, H. G., Lv, J., Pu, L., Zhang, R., Shen, B., and Zheng, Y. D., International Conference on Solid-State and Integrated Circuits Technology Proceedings, pp. 881884 (2004).Google Scholar
3 Yano, K., Ishii, T., Hashimoto, T., Kobayashi, T., Murai, F., and Seki, K., IEEE Trans. Electron Devices 41 1628 (1994).CrossRefGoogle Scholar
4 Blauwe, J. D., IEEE Trans. Nanotechnol. 1, 72 (2002).CrossRefGoogle Scholar
5 Kanjilal, A., Lundsgaard Hansen, J., Gaiduk, P., Nylandsted Larsen, A., Cherkashin, N., Claverie, A., Normand, P., Kapelanakis, E., Skarlatos, D., and Tsoukalas, D., Appl. Phys. Lett. 82, 1212 (2003).CrossRefGoogle Scholar
6 Dufourcq, J., Bodnar, S., Gay, G., Lafond, D., Molas, P., Nieto, J. P., Vandroux, L., jodin, L., Gustavo, F., and Baron, Th., Appl. Phys. Lett. 92. 073102 (2008).CrossRefGoogle Scholar
7 Singh, P. K., Bisht, G., Hofmann, R., Singh, K., Krishna, N., and Mahapatra, S., IEEE Electron Device Lett. 29, 1389 (2008).CrossRefGoogle Scholar
8 Chan, K. C., Lee, P. F., and Dai, J. Y., Microelectron. Eng. 85, 2385 (2008).CrossRefGoogle Scholar
9 Park, B., Choi, S., Lee, H–R., Cho, K.. and Kim, S., Solid State Commun. 143, 550 (2007).CrossRefGoogle Scholar
10 Chang, S. M., Huang, H. Y., Yang, H. Y., and Chen, L. J., Appl. Phys. Lett. 74, 224 (1999).CrossRefGoogle Scholar
11 Bharat, S., Sahoo, P.K., and Katiyar, M., Thin Solid Films 462, 127 (2004).Google Scholar
12 Panda, D., Dhar, A., and A, Ray, S. K., IEEE Trans. Electron Devices 55, 2403 (2008).CrossRefGoogle Scholar
13 Lee, D. U., Lee, M. S., Kim, J-H., Kim, E. K., Koo, H-M., Cho, W-J., and Kim, W. M., Appl. Phys. Lett. 90, 093514 (2007).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 5 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 5th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Fabrication and Electrical Characterization of Metal-Silicide Nanocrystals for Nano Floating Gate Nonvolatile Memory
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Fabrication and Electrical Characterization of Metal-Silicide Nanocrystals for Nano Floating Gate Nonvolatile Memory
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Fabrication and Electrical Characterization of Metal-Silicide Nanocrystals for Nano Floating Gate Nonvolatile Memory
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *