Hostname: page-component-788cddb947-55tpx Total loading time: 0 Render date: 2024-10-12T16:10:40.869Z Has data issue: false hasContentIssue false

Fabrication and Characterization of Lead Silicate Doped PZT Thin Films

Published online by Cambridge University Press:  11 February 2011

Junichi Karasawa
Affiliation:
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Nagano-ken, 399–0293, Japan
Yasuaki Hamada
Affiliation:
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Nagano-ken, 399–0293, Japan
Koji Ohashi
Affiliation:
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Nagano-ken, 399–0293, Japan
Takeshi Kijima
Affiliation:
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Nagano-ken, 399–0293, Japan
Eiji Natori
Affiliation:
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Nagano-ken, 399–0293, Japan
Tatsuya Shimoda
Affiliation:
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Nagano-ken, 399–0293, Japan
Get access

Abstract

The crystal structure, surface morphology and electrical properties of PbSiOx (PSO) doped Pb(Zr,Ti)O3 (PZT) thin films were systematically investigated. The starting solutions of PSO-doped PZT were prepared by mixing sol-gel solutions of PZT and PSO. RTA-calcined thin films were crystallized by means of an oxygen partial pressure controlled post-annealing process. After the calcining process, lightly doped PZT thin films containing an amount of PSO dopant less than 1.0 at.% exhibit (111)-preferred orientation, and fine grains having a diameter of 50 nm and column-like structure. As the amount of PSO dopant is increased to 5.0 at.%, the (111) peaks becomes obscure and the (100) peaks together with the minor (110) peaks becomes dominant. The column-like structure changes into a plate-like structure having coarse grains whose diameter exceeds 500 nm. Further increasing the level of PSO dopant to 20.0 at.% causes the appearance of a pyrochlore phase having an extremely smooth surface without apparent grains. On the other hand, after the post-annealing process, the pyrochlore phase seen in the heavily doped PZT remarkably disappears, replaced by a perovskite phase together with PSO. The remnant polarization (Pr) gradually decreases as the amount of PSO dopant increases. The break down voltage, fatigue, imprint and other reliability parameters are improved within the proper doping range.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Kijima, T. et al, Jpn. J. Appl. Phys., Vol. 41, Part 2, L716 (2002)Google Scholar
[2] Karasawa, J. et al, (15th ISIF, to be presented) (2003)Google Scholar
[3] Kijima, T. et al, Extended Abstract of The 62nd Autumn Meeting 2001, The Japan Society of Applied Physics, 14p-ZR-2 (in Japanese)Google Scholar
[4] Karasawa, J. et al, (unpublished work, Seiko Epson inside report)Google Scholar