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Extracting the Device Parameters from Organic Thin Film Transistors

Published online by Cambridge University Press:  26 February 2011

Eung Seok Park
Affiliation:
kurt@korea.ac.kr, Korea University, School of Electrical Engineering, Engineering Building, Korea University, Anam-dong, Seongbuk-gu, Seoul, 136701, Korea, Republic of
Pil Soo Kang
Affiliation:
k2phs@korea.ac.kr, Korea University, School of Electrical Engineering, Anam-dong, Seongbuk-gu, Seoul, 136701, Korea, Republic of
Gyu Tae Kim
Affiliation:
gtkim@korea.ac.kr, Korea University, School of Electrical Engineering, Anam-dong, Seongbuk-gu, Seoul, 136701, Korea, Republic of
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Abstract

Organic thin film transistors(OTFTs) were simulated by a SPICE model adopted in hydrogenated amorphous TFTs(a-Si:H). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs originating from the distribution of trap sites for the hopping conduction.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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