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The Extended State Mobility in Amorphous Silicon Alloys

Published online by Cambridge University Press:  21 February 2011

P.M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
R. Vanderhaghen
Affiliation:
Laboratoire de Physique des Interfaces et Couches Minces (UPRA 0258 du CNRS), Ecole Polytechnique, 91128 Palaiseau, France
A. Mourchid
Affiliation:
Laboratoire de Physique des Interfaces et Couches Minces (UPRA 0258 du CNRS), Ecole Polytechnique, 91128 Palaiseau, France Laboratoire d'Optique Appliquée, ENSTA-Ecole Polytechnique, 91120 Palaiseau, France
D. Hulin
Affiliation:
Laboratoire d'Optique Appliquée, ENSTA-Ecole Polytechnique, 91120 Palaiseau, France
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Abstract

The total scattering time of free carriers injected optically in the extended states of amorphous semiconductors has been measured using the techniques of femtosecond time-resolved spectroscopy. We find that this scattering time is less than 1 femtosecond, independent of alloy composition (a-Si:H, a-Si,Ge:H, a-Si,C:H) and temperature (from 77 K to 400 K). The extended state mobility deduced from the measurement of the scattering time and of the effective mass is approximately 6 cm2/Vs. A model is proposed to explain these results

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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