Published online by Cambridge University Press: 28 February 2011
The formation of porous silicon (PS) by electrochemical dissolution of bulk Si is described by a new model involving quantum mechanical calculations of the tunneling probability of holes through small crystallites (< 60 Å) into the electrolyte. This tunneling probability shows oscillations as a function of crystallite size. The presented model calculations are in agreement to the microstructure of p-PS — deduced from Raman measurements — as a function of etching parameters and substrate doping level.
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