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Extended Quantum Model for Porous Silicon Formation

Published online by Cambridge University Press:  28 February 2011

H. Münder
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
St. Frohnhoff
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
M.G. Berger
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
M. Marso
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
M. Thönissen
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
R. Arens-Fischer
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
H. Lüth
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
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Abstract

The formation of porous silicon (PS) by electrochemical dissolution of bulk Si is described by a new model involving quantum mechanical calculations of the tunneling probability of holes through small crystallites (< 60 Å) into the electrolyte. This tunneling probability shows oscillations as a function of crystallite size. The presented model calculations are in agreement to the microstructure of p-PS — deduced from Raman measurements — as a function of etching parameters and substrate doping level.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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