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Etching Selectivity of SiF4 and H2 Plasmas for c-Si, a-Si:H and SiO2

Published online by Cambridge University Press:  25 February 2011

Y. Okada  and
S. Wagner
Y. Okada
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

The etching of a-Si:H, c-Si and SiO2 in glow discharges of SiF4 and H2 was studied. The order of the etch rates in a SiF4 plasma is a-Si:H > c-Si > SiO2. The etch rates of these materials are nearly independent of temperature. Only a-Si:H is etched in a H2 plasma.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 541
Copyright
Copyright © Materials Research Society 1990

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