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Erbium-Doped Silicon Prepared by UHV/CVD

Published online by Cambridge University Press:  22 February 2011

David B. Beach
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Reuben T. Collins
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Francoise K. Legoues
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Jack O. Chu
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

Erbium-doped silicon has been prepared using Ultra High Vacuum/Chemical Vapor Deposition (UHV/CVD). An erbium mctalorganic compound, tris-1,1,1,5,5,5-hexafluoro-2,4-pentanedionato erbium (111) (Er(HFAC)3), was used as the erbium source and silane was used as the silicon source. Films were deposited at 650 °C at a total pressure of 1 mtorr. Erbium concentrations between 8×1019 and 1×1018 Er atoms/cm3 were prepared by varying the Er source reservoir temperature. Low temperature photoluminescence measurements showed strong emission at 1.54μm. The films are single crystal, but with a high concentration of threading defects.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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