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Environment of Er Doped in a-Si:H and Its Relation with Photoluminescence Spectra

Published online by Cambridge University Press:  01 February 2011

Minoru Kumeda
Affiliation:
kumeda@t.kanazawa-u.ac.jp, Kanazawa University, Div. Electrical Engineering and Computer Science, Grad. Scholl of Natural Sci. & Tech., Kakuma-machi, Kanazawa, N/A, 920-1192, Japan, 81-76-234-4875, 81-76-234-4870
Yoshitaka Sekizawa
Affiliation:
1025seki@ee.t.kanazawa-u.ac.jp, Kanazawa Univ., Div. Electrical Engineering and Computer Science, Grad. School of Natural Sci. & Tech., Kanazawa, N/A, 920-1192, Japan
Akiharu Morimoto
Affiliation:
amorimot@t.kanazawa-u.ac.jp, Kanazawa Univ., Div. Electrical Engineering and Computer Science, Grad. School of Natural Sci. & Tech., Kanazawa, N/A, 920-1192, Japan
Tatsuo Shimizu
Affiliation:
t-shimizu@po4.nsk.ne.jp, Kanazawa Univ., Professor Emeritus, Kanazawa, N/A, 920-1192, Japan
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Abstract

The crystal-field potential at the Er3+ ion surrounded by six oxygen ions is expanded in terms of polynomials. After converting it into equivalent angular momentum operators, the Stark-splitting of the 4I15/2 ground state of the Er3+ ion is calculated. Influence of the change in the environment of the Er3+ ion on the shift of the energy levels is investigated and compared with the observed Er photoluminescence spectrum in a-Si:H. The scattering of the calculated energy levels by the structural fluctuation around the Er3+ ion is also compared with the linewidth of the component photoluminescence lines.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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