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Emission Characteristics of the Mo-Coated Silicon Tips

Published online by Cambridge University Press:  10 February 2011

Heung-Woo Park
Affiliation:
Dept. of Electronics and Information Technology, KIST, 130-6, P.O.Box 131, Cheongryang, Seoul, Korea, bkju@willow.kist.re.kr
Byeong-Kwon Ju
Affiliation:
Dept. of Electronics and Information Technology, KIST, 130-6, P.O.Box 131, Cheongryang, Seoul, Korea, bkju@willow.kist.re.kr
Jae-Hoon Jung
Affiliation:
Dept. of Electronics and Information Technology, KIST, 130-6, P.O.Box 131, Cheongryang, Seoul, Korea, bkju@willow.kist.re.kr
Yun-Hi Lee
Affiliation:
Dept. of Electronics and Information Technology, KIST, 130-6, P.O.Box 131, Cheongryang, Seoul, Korea, bkju@willow.kist.re.kr
Jung-Ho Park
Affiliation:
Dept. of Electronics Eng., Korea Univ., Seongbuk-Ku, Seoul 136-701, Korea
In-Jae Chung
Affiliation:
Microelectronics Centre, Univ. of South Australia, S.A., 5098, Australia
M. R. Hascard
Affiliation:
Microelectronics Centre, Univ. of South Australia, S.A., 5098, Australia
Myung-Hwan Oh
Affiliation:
Dept. of Electronics and Information Technology, KIST, 130-6, P.O.Box 131, Cheongryang, Seoul, Korea, bkju@willow.kist.re.kr
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Abstract

Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was then coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were measured in the high vacuum environment. Field emission currents were proved by the Fowler-Nordheim plot studies.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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