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Emission Characteristics of the Mo-Coated Silicon Tips

Published online by Cambridge University Press:  10 February 2011

Heung-Woo Park
Affiliation:
Dept. of Electronics and Information Technology, KIST, 130-6, P.O.Box 131, Cheongryang, Seoul, Korea, bkju@willow.kist.re.kr
Byeong-Kwon Ju
Affiliation:
Dept. of Electronics and Information Technology, KIST, 130-6, P.O.Box 131, Cheongryang, Seoul, Korea, bkju@willow.kist.re.kr
Jae-Hoon Jung
Affiliation:
Dept. of Electronics and Information Technology, KIST, 130-6, P.O.Box 131, Cheongryang, Seoul, Korea, bkju@willow.kist.re.kr
Yun-Hi Lee
Affiliation:
Dept. of Electronics and Information Technology, KIST, 130-6, P.O.Box 131, Cheongryang, Seoul, Korea, bkju@willow.kist.re.kr
Jung-Ho Park
Affiliation:
Dept. of Electronics Eng., Korea Univ., Seongbuk-Ku, Seoul 136-701, Korea
In-Jae Chung
Affiliation:
Microelectronics Centre, Univ. of South Australia, S.A., 5098, Australia
M. R. Hascard
Affiliation:
Microelectronics Centre, Univ. of South Australia, S.A., 5098, Australia
Myung-Hwan Oh
Affiliation:
Dept. of Electronics and Information Technology, KIST, 130-6, P.O.Box 131, Cheongryang, Seoul, Korea, bkju@willow.kist.re.kr
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Abstract

Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was then coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were measured in the high vacuum environment. Field emission currents were proved by the Fowler-Nordheim plot studies.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Branston, D.W. and Stephani, D., IEEE E.D. 38, 2329 (1991)CrossRefGoogle Scholar
2. Jiang, J.C. and White, R.C., SID '93 Digest, 596 (1993)Google Scholar
3. King, R.A. et al., J. Vac. Sci. Technol. B 13(2), 603 Mar/Apr (1995)CrossRefGoogle Scholar
4. Liu, J. et al., J. Vac. Sci. Technol. B 13(2), 422 Mar/Apr (1995)CrossRefGoogle Scholar

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