Hostname: page-component-788cddb947-m6qld Total loading time: 0 Render date: 2024-10-10T07:42:53.290Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron-Phonon and Phonon-Phonon Interactions Under Laser Annealing Conditions

Published online by Cambridge University Press:  25 February 2011

Alvin Compaan
Alvin Compaan*
Affiliation:
Kansas State University, Dept. of Physics, Cardwell Hall, Manhattan, KS 66506
Get access

Abstract

Since the first time-resolved Raman studies of pulsed laser annealing (PLA) effects in Si, a number of cw Raman studies have been performed which provide a much improved basis for understanding the consequences on Raman spectra of temperature-dependent resonance effects, high carrier density effects, phonon anharmonicity, and strain effects. Here we briefly review these effects and then analyze the latest pulsed Raman studies of PLA including Stokes/anti-Stokes ratios, the shift and shape of the first order line, and time-resolved second-order spectra. The Raman data indicate the existence of a Raman-silent phase followed by a rapidly cooling solid which begins within 300 K of the normal melting temperature of Si. The Raman data also give evidence of carrier densities in the recrystallizing solid of ~1−2×l019/cm3 .

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 65
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Heine, V. and Van Vechten, J. A., Phys. Rev. B 13, 1622 (1976); J. Bok, Phys. Lett. 84A, 448 (1981).Google Scholar
2. Van Vechten, J. A. in Semiconductor Processes Probed by Ultrafast Spectroscopy, edited by Alfano, R. R. (Academic, NY, 1983).Google Scholar
3. Van Vechten, J. A., J. Phys. (Paris) 44, C5–11 (1983).Google Scholar
4. Preston, J. S. and Van Driel, H. M., Phys. Rev. B 30, 1950 (1984).Google Scholar
5. Shank, C. V., Yen, R., Hirliman, C., Phys. Rev. Lett. 50, 454 (1983); Hulin, D., Combescot, M., Bok, J., Migus, A., Vinet, J. Y., and Antonetti, A., Phys. Rev. Lett. 52, 1998 (1984).Google Scholar
6. Larsen, B. C., White, C. W., Noggle, T. S., Barhurst, J. F. and Mills, D. M., Mat. Res. Soc. Symp. Proc. 13, 43 (1983).Google Scholar
7. Liu, J. M., Yen, R., Kurz, H. and Bloembergen, N., Appl. Phys. Lett. 39, 7551 (1981); Bensoussan, M. and Moisson, J. M., Physica 117B and 118B, 404 (1983); Pospieszczyk, A., Abdel Harith, M. and Stritzker, B., J. Appl. Phys. 54, 3176 (1983).Google Scholar
8. Lo, H. W. and Compaan, A., Phys. Rev. Lett. 44, 1604 (1980).Google Scholar
9. von der Linde, D. and Wartman, G., Appl. Phys. Lett. 41, 700 (1982); von der Linde, D., Wartman, G., and Ozols, A., Mat. Res. Soc. Symp. Proc. 13, (1983); Wartman, G., von der Linde, D., and Compaan, A., Appl. Phys. Lett. 43, 613 (1983).Google Scholar
10. Compaan, A., Mat. Res. Soc. Symp. Proc. 13, 23 (1983); Compaan, A., Lo, H. W., Lee, M. C. and Aydinli, A., Phys. Rev. B 26, 1079 (1982).Google Scholar
11. Wartmann, G., Kemmler, M. and von der Linde, D., Phys. Rev. B 30, 4850 (1984).Google Scholar
12. Compaan, A., in Proc. 3rd Trieste IUPAP Semiconductor Symposium "High Excitation and Short Pulse Phenomena# July 2–4, 1984, [J. Luminescence (in print)].Google Scholar
13. Tsu, R. and Hernandez, J. G., Appl. Phys. Lett. 41, 1016 (1982)Google Scholar
14. Balkanski, M., Wallis, R. F. and , E. Haro, Phys. Rev. B 28, 1928 (1983).Google Scholar
15. Nemanich, R. J., Biegelson, D. K., Street, R. A. and Fennell, L. E., Phys. Rev. B 29, 605 (1984).Google Scholar
16. See for example, Balkanski, M., Jain, K. P., Beserman, R. and Jouanne, M., Phys. Rev. B 12, 4328 (1975) and Chandrasekhar, M., Renucci, J. B. and Cardona, M., Phys. Rev. B 4, 1623 (1978).Google Scholar
17. Compaan, A., Contreras, G., Cardona, M. and Axmann, A., J. Phys. (Paris) 44, C5–197 (1983); A. Compaan, G. Contreras and M. Cardona, Mat. Res. Soc. Symp. Proc. 23, 117 (1984); G. Contreras, A. K. Sood, M. Cardona A. Compaan, Sol. St. Commun. 49, 303 (1984).Google Scholar
18. Sood, A. K. and Cardona, M., Sol. St. Commun. 49, 306 (1984).Google Scholar
19. Compaan, A. and Trodahl, H. J., Phys. Rev. B 29 793 (1984).Google Scholar
20. Battacharya, A., Streetman, B. G. and Hess, K., J. Appl. Phys. 53, 1261 (1982); Lee, M. C., Aydinli, A., Lo, H. W. and Compaan, A., J. Appl. Phys. 53, 1262 (1982).Google Scholar
21. , Landoldt-Bornstein, New Series Gp. III, Vol. 7a ed. by Madelung, O., Schulz, M. and Weiss, H. (Springer, Berlin, 1982).Google Scholar
22. Dziewior, J. and Schmid, W., Appl. Phys. Lett. 31, 346 (1977); Svantessen, K. G. and Nilsson, N. G., Sol. St. Electron, 21, 1603 (1978).Google Scholar
23. Jellison, G. E. and Modine, F. A., Phys. Rev. B 27,7466 (1983); Aspnes, D. E. and Studna, A. A., Phys. Rev. B 27, 985 (1983).Google Scholar
24. Vina, L. and Cardona, M., Phys. Rev. B 29, 6739(1984).Google Scholar
25. The effects on Raman spectra of compressive stress resulting from laser heating have been discussed by Lo, H. W. and Compaan, A. [J. Appl. Phys. 1565 (1980)] and analyzed in detail by Jellison, G. E., Wood, Jr. and R. F. [Mat. Res. Symp. Proc. 23, 153 (1984)]. We find the stress-induced phonon frequency shifts to be approximately ¼ as large as calculated by Jellison and Wood. The difference probably arises from a numerical error in the original stress experiments of Anastassakis, et al. [Anastassakis, E., Pinczuk, A., Burstein, E., Pollak, F. H., and Cardona, M., Sol. St. Commun. 8, 133 (1970)].Google Scholar
26. Temple, P. A. and Hathaway, C. E., Phys. Rev. B 7, 3685 (1973).Google Scholar
27. Narayan, J., Fletcher, J., White, C. W. and Christie, H., J. Appl. Phys. 52, 7121 (1981); Jellison, G. E., , Jr., Lowndes, D. H., and Wood, R. F., Mat. Res. Soc. Symp. Proc. 13, 35 (1983).Google Scholar
28. Wood, R. F., Rasolt, M. and Jellison, G. E., , Jr., Mat. Res. Soc. Symp. Proc. 4, 61 (1982).Google Scholar
29. Wood, R. F., Lowndes, D. H., Jellison, G. E., Modine, Jr. and F. A., Appl. Phys. Lett. 41, 287 (1982).Google Scholar
30. Compaan, A., Lee, M. C., Lo, H. W., Trott, G. J. and Aydinli, A., J. Appl. Phys. 54, 5950 (1983).Google Scholar
31. Lee, M. C., Trott, G. J. and Compaan, A. (unpublished).Google Scholar