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Electronic and Optical Properties of Silicon Nanocrystals: Structural Effects

Published online by Cambridge University Press:  10 February 2011

E. Degoli ,
S. Ossicini ,
M. Luppi ,
E. Luppi ,
R. Magri ,
G. Cantele  and
D. Ninnoc
E. Degoli
Affiliation:
INFM- Research Center for nanoStructures and bioSystems at Surfaces(S3) Dipartimento di Scienze e Metodi dell'Ingegneria, Università di Modena e Reggio Emilia, via Allegri 13, 42100 Reggio Emilia, Italy
S. Ossicini
Affiliation:
INFM- Research Center for nanoStructures and bioSystems at Surfaces(S3) Dipartimento di Scienze e Metodi dell'Ingegneria, Università di Modena e Reggio Emilia, via Allegri 13, 42100 Reggio Emilia, Italy
M. Luppi
Affiliation:
INFM-Research Center for nanoStructures and bioSystems at Surfaces(S3) Dipartimento di Fisica, Università di Modena e Reggio Emilia, via Campi 213/A, 41100 Modena, Italy
E. Luppi
Affiliation:
INFM-Research Center for nanoStructures and bioSystems at Surfaces(S3) Dipartimento di Fisica, Università di Modena e Reggio Emilia, via Campi 213/A, 41100 Modena, Italy
R. Magri
Affiliation:
INFM-Research Center for nanoStructures and bioSystems at Surfaces(S3) Dipartimento di Fisica, Università di Modena e Reggio Emilia, via Campi 213/A, 41100 Modena, Italy
G. Cantele
Affiliation:
INFM and Universita' di Napoli “Federico II” - Dipartimento di Scienze Fisiche, Compl. Univ. M. S. Angelo, Via Cintia, I-80126 Napoli, Italy
D. Ninnoc
Affiliation:
INFM and Universita' di Napoli “Federico II” - Dipartimento di Scienze Fisiche, Compl. Univ. M. S. Angelo, Via Cintia, I-80126 Napoli, Italy
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Abstract

The aim of this work is to investigate the structural, electronic and optical properties of hydrogenated Si nanoclusters (H-Si-nc) in their ground and excited state configurations. Structural relaxations have been fully taken into account in all cases through total energy pseudopotential calculations. Recent results about ab-initio calculations of Stokes shift as a function of the cluster dimension and of optical gain will be presented here. A structural model that can be linked to the four level scheme recently invoked to explain the experimental outcomes relative to the observed optical gain in Si-nc embedded in a SiO2 matrix will be suggested too.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I1.9
Copyright
Copyright © Materials Research Society 2003

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References

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