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Electron-Beam Induced Growth of Silica Nanowires and Silica/Carbon Heterostructures

Published online by Cambridge University Press:  01 February 2011

Francisco Solá
Affiliation:
francisco.sola@prlsam.org, University of Puerto Rico, Department of Physics, Rio Piedras Campus, San Juan, 00931, Puerto Rico
Oscar Resto
Affiliation:
oscar@uprrp.edu, University of Puerto Rico, Department of Physics, Rio Piedras Campus, San Juan, 00931, Puerto Rico
Azlin M Biaggi-Labiosa
Affiliation:
azlinbiaggi-labiosa@uprrp.edu, University of Puerto Rico, Department of Physics, Rio Piedras Campus, San Juan, 00931, Puerto Rico
Luis F Fonseca
Affiliation:
luis@uprrp.edu, University of Puerto Rico, Physics, Rio Piedras Campus, San Juan, 00931, Puerto Rico, 787-767 0940, 787-764 9006
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Abstract

A novel synthesis of silica nanowires and silica/carbon heterostructures by electron beam irradiation on porous silicon films was investigated. The method allows us to monitor the growth process in real time at atomic scales. Depending on the electron dose we obtain nanowires with diameters in the range of 15-49nm and lengths up to 500 nm. We found that the adequate electron dose was between 0.01 Acm-2 and 2 Acm-2. Additional electron dose causes plastic and failure deformations in the silica nanowires. A growth model consistent with our findings is presented that involves the flow of mass from the substrate to the nanowire driven by the local electric fields. Heterostructures showing a nanopalm-like shape are obtained after exposing the silica nanowire to poor vacuum conditions in which carbon aggregation from the surrounding gas is promoted by the local electric fields enhanced at the tip of the silica wires.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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