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Electron Irradiation Induced Trap In N-Type Gan

Published online by Cambridge University Press:  10 February 2011


Z-Q. Fang
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435 University Research Center, Wright State University, Dayton, OH 45435
J. W. Hemsky
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435
D. C. Look
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435 University Research Center, Wright State University, Dayton, OH 45435
M. P. Mack
Affiliation:
Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106
R. J. Molnar
Affiliation:
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA 02173
G. D. Via
Affiliation:
University Research Center, Wright State University, Dayton, OH 45435

Abstract

A 1-MeV-electron-irradiation (EI) induced trap at Ec-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 1016 cm−3 and 1.3 × 1017 cm−3, respectively. Up to an irradiation dose of 1 × 1015 cm−2, the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the EI-induced trap is produced at a rate of at least 0.2 cm−1. The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.


Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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