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Electrical Properties of Thin Nitrogen-Doped Ultrananocrystalline Diamond Films

Published online by Cambridge University Press:  11 February 2011

V.I. Polyakov ,
A.I. Rukovishnikov ,
S.M. Pimenov ,
J.A. Carlisle  and
D.M. Gruen
V.I. Polyakov
Affiliation:
Institute of Radio Engineering & Electronics, RAS, 11 Mohovaya str., 103907 Moscow, Russia, E-mail: pvi@aha.ru
A.I. Rukovishnikov
Affiliation:
Institute of Radio Engineering & Electronics, RAS, 11 Mohovaya str., 103907 Moscow, Russia, E-mail: pvi@aha.ru
S.M. Pimenov
Affiliation:
General Physics Institute, 38 Vavilova str., 119991 Moscow, Russia
J.A. Carlisle
Affiliation:
Material Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439, USA
D.M. Gruen
Affiliation:
Material Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439, USA
Corresponding
E-mail address:
pvi@aha.ru
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Abstract

The electrical properties of ultrananocrystalline diamond (UNCD) films of approximately 1μm thickness were studied. UNCD films were deposited on p-type Si substrates from CH4/Ar/N2 gas mixtures using microwave plasma CVD techniques. It was found that the UNCD films with higher nitrogen concentration and higher electron conductivity have substantially higher concentration of shallow levels with activation energy of about 0.05 eV. The change of concentration, activation energy and capture cross-section of nitrogen-induced levels for UNCD films synthesized using different nitrogen concentration in the plasma was studied by charge– based deep level transient spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library Archive , Volume 737 , 2002 , F3.32
Copyright
Copyright © Materials Research Society 2003

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References

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