Hostname: page-component-7479d7b7d-c9gpj Total loading time: 0 Render date: 2024-07-14T04:40:00.452Z Has data issue: false hasContentIssue false

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

Published online by Cambridge University Press:  17 March 2011

Won-Jae Lee
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
Chang-Ho Shin
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
In-Kyu You
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
Il-Suk Yang
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
Sang-Ouk Ryu
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
Byoung-Gon Yu
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
Kyoung-Ik Cho
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
Soon-Gil Yoon
Affiliation:
Department of Materials Engineering, Chungnam National University, Yusong-gu, Daejon, 305-764, Korea
Chun-Su Lee
Affiliation:
Genitech. Co., Ltd., 1694-5, Shinil-dong, Daedug-gu, Daejon, 306-230, Korea
Get access

Abstract

The SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Goodman, C. H. L., and Pessa, M. V., J. Appl. Phys. 60, R65 (1986).Google Scholar
2. Wilk, G. D., and Wallace, R. M., Appl. Phys. Lett. 74, 2854 (1999).Google Scholar
3. Eisenbeiser, K., Finder, J. M., Yu, Z., Ramdani, J., Curless, J. A., Hallmark, J. A., Droopad, R., Ooms, W. J., Salem, L., Bradshaw, S., and Overgaard, C. D., Appl. Phys. Lett. 76, 1324 (2000).Google Scholar
4. Lee, B. H., Kang, L., Nieh, R., Qi, W. J., and Lee, J. C., Appl. Phys. Lett. 76, 1926 (2000).Google Scholar
5. McKee, R. A., Walker, F. J., and Chisholm, M. F., Phys. Rev. Lett. 81, 3014 (1998).Google Scholar
6. Klaus, J. W., Sneh, O., and George, S. M., Science 278, 1934 (1997).Google Scholar
7. Hubbard, K. J., and Schlom, D. G., J. Mater. Res. 11, 2757 (1996).Google Scholar
8. Packan, P. A., Science 285, 2079 (1999).Google Scholar
9. Ritala, M., Kukli, K., Rahtu, A., Raisanen, P. I., Leskela, M., Sajavaara, T., and Keinonen, J., Science 288, 31 (2000).Google Scholar
10. Tokumitsu, E., Fujii, G., and Ishiwara, H., Appl. Phys. Lett. 75, 575 (1999).Google Scholar
11. Scott, J. F., and Araujo, C. A. P. de, Science 246, 106 (1989).Google Scholar
12. Lee, W. J., Shin, C. H., Cho, C. R., Lyu, J. S., Kim, B. W., Yu, B. G., and Cho, K. I., Jpn. J. Appl.Phys. 38, 2039 (1999).Google Scholar
13. Crosbie, M., Wright, P., Davies, H., Jones, A., Leedham, T., O'Brien, P., and Critchlow, G., Chem. Vap. Deposition 5, 9 (1999).Google Scholar
14. Min, J. S., Son, Y. W., Kang, W. G., Chun, S. S., and Kang, S. W., Jpn. J. Appl. Phys. 37, 4999 (1998).Google Scholar
15. Suntola, T., and Simpson, M., Atomic Layer Epitaxy (Blackie, London, 1990).Google Scholar