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Electrical Properties of Ion Implanted and Chemically Doped Polyaniline Films

Published online by Cambridge University Press:  10 February 2011

Andrej N. Aleshin
Affiliation:
A.F. loffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
Nikita B. Mironkov
Affiliation:
A.F. loffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
Alexander V. Suvorov
Affiliation:
A.F. loffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
Jeanine A. Conklint
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center, University of California, Los Angeles, CA, 90095- 1569, USA
Timothy M Su
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center, University of California, Los Angeles, CA, 90095- 1569, USA
Richard B. Kaner
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center, University of California, Los Angeles, CA, 90095- 1569, USA
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Abstract

The electronic transport mechanism for ion implanted and chemically doped polyanilinefilms was investigated through temperature dependent dc conductivity measurements over thetemperature range 1.8 – 300K. Chemically synthesized emeraldine base polyaniline free-standingfilms (∼40 µm thick) were irradiated by Ar ions at an energy of 90 keV and doses ranging from 1 ×1014 to 3 × 1017 cm-2 to an estimated thickness of 100 nm. Chemical modification of Polyanilinefilms consisted of doping with 1.0 M H2SO4.

Ion implantation and chemical doping were found to considerably increase the roomtemperature dc conductivity of polyaniline films reaching values up to 800 S cm-1and 8 S cm-1, respectively. Both ion irradiated and chemically doped polyaniline films exhibit p-type conduction.An increase in the irradiation dose increases the stability of the conducting layer compared tochemical doping. In both cases the samples are on the insulator side of the metal-insulatortransition, where cr(T) exhibits a common temperature dependent characteristic of the variablerange hopping (VRH) transport mechanism:σ(T) = σ (0) exp[ - (To / T)m ] (1)where m = 0.5 and To = 103 to 104K. The influence of electron-electron Coulomb the low temperature VRH of ion implanted and chemically doped polyanilCinoeu floilmmbs iisn tperreascetniotend

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1. Wang, Z.H., Scherr, E.M., MacDiarmid, A.G. and Epstein, A.J., Phys. Rev. B 45, p. 4 190 (1992).CrossRefGoogle Scholar
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